发明授权
- 专利标题: Semiconductor laser device
- 专利标题(中): 半导体激光器件
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申请号: US363834申请日: 1994-12-27
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公开(公告)号: US5764668A公开(公告)日: 1998-06-09
- 发明人: Shoji Ishizaka , Kiyofumi Muro , Tsuyoshi Fujimoto , Yoshikazu Yamada
- 申请人: Shoji Ishizaka , Kiyofumi Muro , Tsuyoshi Fujimoto , Yoshikazu Yamada
- 申请人地址: JPX Tokyo
- 专利权人: Mitsui Petrochemical Industries, Ltd.
- 当前专利权人: Mitsui Petrochemical Industries, Ltd.
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX5-328140 19931224; JPX6-028102 19940225
- 主分类号: H01S5/20
- IPC分类号: H01S5/20 ; H01S5/32 ; H01S5/34 ; H01S3/19
摘要:
To overcome the dilemma on device design in control of waveguide mode experienced in the conventional weak wave-guide-laser and SCH structure laser, realize higher output and lower dispersion of radiation beam, and improve the waveguide mode, on both sides of an active layer, carrier blocking layers for reducing the waveguide function of the active layer are provided, and waveguide layers are provided on both outer sides of the carrier blocking layers, and cladding layers are provided on both outer sides of the waveguide layers, the active layer is lamination of side barrier layers and a quantum well layer sandwiched therebetween, or side barrier layers, and a quantum well layer and a barrier layer sandwiched therebetween, the composition of the quantum well layer is Ga.sub.y In.sub.1-y As (0.6
公开/授权文献
- US4469313A Apparatus for production of metal powder 公开/授权日:1984-09-04