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    Semiconductor laser element and laser device using the same element
    2.
    发明授权
    Semiconductor laser element and laser device using the same element 失效
    半导体激光元件和使用相同元件的激光器件

    公开(公告)号：US5467364A

    公开(公告)日：1995-11-14

    申请号：US287802

    申请日：1994-08-09

    申请人： Kiyofumi Muro ,  Tsuyoshi Fujimoto ,  Yuji Yoshida ,  Yoshikazu Yamada ,  Shoji Ishizaka

    发明人： Kiyofumi Muro ,  Tsuyoshi Fujimoto ,  Yuji Yoshida ,  Yoshikazu Yamada ,  Shoji Ishizaka

    IPC分类号： H01S5/20 ,  H01S5/32 ,  H01S5/323 ,  H01S5/34 ,  H01S5/343 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S5/34 ,  H01S2301/18 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/3211 ,  H01S5/32308 ,  H01S5/3421 ,  H01S5/3428 ,  H01S5/3432

    摘要： A semiconductor laser of this invention, having a structure of an element composed of: carrier block layers, formed bilaterally externally of an active layer in section which is formed in the vertical direction from the surface of the element, for reducing a light guiding function of the active layer; wave guide layers provided bilaterally externally of said carrier block layers and clad layers provided so that the wave guide layers are sandwiched in between the clad layers. This invention overcomes a dilemma inherent in the conventional weakly guiding laser and LOC structured laser in terms of designing the device for controlling a guided mode. The present invention also solves the problems in terms of attaining higher outputting and a low dispersion of the radiation beams and improving a beam profile.

    摘要翻译： 本发明的半导体激光器具有由以下部分构成的元件的结构：载体块层，从在元件的表面沿垂直方向形成的截面中的双方形成的有源层的外侧形成，用于降低导光功能 活性层; 在所述载体块层和包层之间的外侧提供波导引导层，使得波导层夹在包层之间。 本发明克服了传统的弱引导激光和LOC结构激光器在设计用于控制引导模式的装置方面的困境。 本发明还解决了获得更高输出和辐射束的低色散并改善光束轮廓的问题。

    Semiconductor laser device
    3.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US5764668A

    公开(公告)日：1998-06-09

    申请号：US363834

    申请日：1994-12-27

    申请人： Shoji Ishizaka ,  Kiyofumi Muro ,  Tsuyoshi Fujimoto ,  Yoshikazu Yamada

    发明人： Shoji Ishizaka ,  Kiyofumi Muro ,  Tsuyoshi Fujimoto ,  Yoshikazu Yamada

    IPC分类号： H01S5/20 ,  H01S5/32 ,  H01S5/34 ,  H01S3/19

    CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S2301/18 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/3211 ,  H01S5/3409

    摘要： To overcome the dilemma on device design in control of waveguide mode experienced in the conventional weak wave-guide-laser and SCH structure laser, realize higher output and lower dispersion of radiation beam, and improve the waveguide mode, on both sides of an active layer, carrier blocking layers for reducing the waveguide function of the active layer are provided, and waveguide layers are provided on both outer sides of the carrier blocking layers, and cladding layers are provided on both outer sides of the waveguide layers, the active layer is lamination of side barrier layers and a quantum well layer sandwiched therebetween, or side barrier layers, and a quantum well layer and a barrier layer sandwiched therebetween, the composition of the quantum well layer is Ga.sub.y In.sub.1-y As (0.6

    摘要翻译： 为了克服传统弱波导激光和SCH结构激光器中经受的波导模式控制中的器件设计困境，实现了更高的输出和更低的辐射束色散，并改善了有源层两侧的波导模式 提供用于降低有源层的波导功能的载流子阻挡层，并且在载流子阻挡层的两个外侧设置波导层，并且在波导层的两个外侧设置包层，活性层为层叠 的侧面阻挡层和夹在其间的量子阱层或侧面阻挡层以及夹在其间的量子阱层和阻挡层，量子阱层的组成为GayIn1-yAs（0.6

    Semiconductor laser apparatus
    4.
    发明授权
    Semiconductor laser apparatus 有权
    半导体激光装置

    公开(公告)号：US06546032B1

    公开(公告)日：2003-04-08

    申请号：US09644080

    申请日：2000-08-23

    申请人： Yasuo Oeda ,  Satoru Okada ,  Kouichi Igarashi ,  Yumi Naito ,  Kiyofumi Muro ,  Takeshi Koiso ,  Yoshikazu Yamada ,  Atsushi Okubo ,  Tsuyoshi Fujimoto

    发明人： Yasuo Oeda ,  Satoru Okada ,  Kouichi Igarashi ,  Yumi Naito ,  Kiyofumi Muro ,  Takeshi Koiso ,  Yoshikazu Yamada ,  Atsushi Okubo ,  Tsuyoshi Fujimoto

    IPC分类号： H01S500

    CPC分类号： B82Y20/00 ,  H01S5/20 ,  H01S5/2004 ,  H01S5/2009 ,  H01S5/34313 ,  H01S5/34353

    摘要： On a substrate of n-type GaAs are sequentially formed an n-type cladding layer (AlGaAs, Al content x=0.07, thickness t=2.86 &mgr;m), an n-type optical waveguide layer (GaAs, t=0.49 &mgr;m), an n-type carrier blocking layer (AlGaAs, x=0.40, t=0.03 &mgr;m), an active layer (composed of an In0.18Ga0.82As quantum well layer and a GaAs barrier layer), a p-type carrier blocking layer (AlGaAs, x=0.40, t=0.03 &mgr;m), a p-type optical waveguide layer (GaAs, t=0.49 &mgr;m), a p-type cladding layer (AlGaAs, x=0.20, t=1.08 &mgr;m), and a p-type cap layer (GaAs) in which a pair of n-type current blocking layers (GaAs) are buried. With this construction, the occurrence of a wavelength spit due to a higher-order mode can be inhibited thereby stabilizing a higher power operation.

    摘要翻译： 在n型GaAs衬底上依次形成n型覆层（AlGaAs，Al含量x = 0.07，厚度t =2.86μm），n型光波导层（GaAs，t =0.49μm）， n型载流子阻挡层（AlGaAs，x = 0.40，t =0.03μm），有源层（由In0.18Ga0.82As量子阱层和GaAs势垒层构成），p型载流子阻挡层（AlGaAs ，p型光波导层（GaAs，t =0.49μm），p型覆层（AlGaAs，x = 0.20，t =1.08μm），p型光波导层 封装了一对n型电流阻挡层（GaAs）的封装层（GaAs）。 利用这种结构，可以抑制由高阶模式引起的波长吐出的发生，从而稳定高功率操作。

    Semiconductor laser device
    5.
    发明授权
    Semiconductor laser device 失效
    半导体激光器件

    公开(公告)号：US6118799A

    公开(公告)日：2000-09-12

    申请号：US817602

    申请日：1997-06-10

    申请人： Atsushi Okubo ,  Yoshikazu Yamada ,  Tsuyoshi Fujimoto ,  Satoru Okada ,  Yumi Naito ,  Kiyofumi Muro

    发明人： Atsushi Okubo ,  Yoshikazu Yamada ,  Tsuyoshi Fujimoto ,  Satoru Okada ,  Yumi Naito ,  Kiyofumi Muro

    IPC分类号： H01S5/20 ,  H01S5/22 ,  H01S5/223 ,  H01S5/343 ,  H01S3/085

    CPC分类号： B82Y20/00 ,  H01S5/2231 ,  H01S5/2238 ,  H01S5/204 ,  H01S5/222 ,  H01S5/3432

    摘要： A semiconductor device including a buffer layer 32 on n-GaAs, a clad layer 31, a wave guide layer 30 and a carrier block layer 29 of n-AlGaAs, a side barrier layer 28 of non-doped AlGaAs, an active layer 27 which is formed by two non-doped GaAs quantum well layers and a barrier layer of AlGaAs, a side barrier layer 26 of non-doped AlGaAs, a carrier block layer 25, a wave guide layer 23 and a clad layer 22 of p-AlGaAs, and a cap layer 21 of p-GaAs are grown in this order. Inside the wave guide layer 23, current blocking layers 24 having a lower refractive index and higher Al-composition than that of the wave guide layer and sandwich a strip-shaped active region 34. This creates a refractive index difference between the active region 34 and buried regions 33 in which each of the current blocking layers 24 exists, thereby forming a refractive index guide structure. Thus, it is possible to obtain a high-output semiconductor laser device of the refractive index guided type which is easy to manufacture.

    摘要翻译： PCT No.PCT / JP95 / 02118 Sec。 371日期：1997年6月10日 102（e）日期1997年6月10日PCT提交1995年10月16日PCT公布。 WO96 / 12328 PCT出版物 日期：1996年04月25日包括n-GaAs上的缓冲层32，n-AlGaAs的覆盖层31，波导层30和载流子层29的半导体器件，非掺杂AlGaAs的侧面阻挡层28， 由两个非掺杂GaAs量子阱层和AlGaAs的势垒层，非掺杂AlGaAs的侧阻层26，载流子阻挡层25，波导层23和覆盖层22形成的有源层27 的p-AlGaAs，并且p-GaAs的覆盖层21依次生长。 在波导层23内，电流阻挡层24具有比波导层低的折射率和更高的Al组分，并且夹持条形有源区域34.这在活性区域34和 其中存在每个电流阻挡层24的埋入区域33，从而形成折射率引导结构。 因此，可以获得易于制造的折射率导向型的高输出半导体激光器件。

    Semiconductor laser device
    7.
    发明授权
    Semiconductor laser device 有权
    半导体激光器件

    公开(公告)号：US06717186B2

    公开(公告)日：2004-04-06

    申请号：US10230988

    申请日：2002-08-30

    申请人： Tsuyoshi Fujimoto ,  Kiyofumi Muro ,  Takeshi Koiso

    发明人： Tsuyoshi Fujimoto ,  Kiyofumi Muro ,  Takeshi Koiso

    IPC分类号： H01L3300

    CPC分类号： H01S5/2231 ,  H01S5/2077 ,  H01S5/222

    摘要： A real index guided semiconductor laser device includes an optical waveguide layer at least on one side of an active layer that has a band gap energy not less than that of the active layer; a cladding layer on an outer side of the optical waveguide layer that has a band gap energy not less than that of the optical waveguide layer; a refractive index control layer having a striped window, buried in the optical waveguide layer by selective growth; and a semiconductor layer formed in the optical waveguide layer by selective growth prior to the selective growth of the refractive index control layer. In a laminated portion including the semiconductor layer and the refractive index control layer, a change in effective refractive index due to a change in thickness of the semiconductor layer is smaller than that of the refractive index control layer.

    摘要翻译： 实际的折射率引导半导体激光器件包括：有源层的至少一侧的光波导层，其具有不小于有源层的带隙能量; 在光波导层的外侧具有不小于光波导层的带隙能量的包层; 折射率控制层，其具有通过选择性生长掩埋在所述光波导层中的条纹窗口; 以及通过在折射率控制层的选择性生长之前的选择性生长而形成在光波导层中的半导体层。 在包括半导体层和折射率控制层的层叠部分中，由于半导体层的厚度变化引起的有效折射率的变化小于折射率控制层的变化。

    Method of fabricating semiconductor laser using selective growth
    8.
    发明授权
    Method of fabricating semiconductor laser using selective growth 有权
    使用选择性增长制造半导体激光器的方法

    公开(公告)号：US06171878B2

    公开(公告)日：2001-01-09

    申请号：US09157246

    申请日：1998-09-18

    申请人： Tsuyoshi Fujimoto ,  Yumi Naito ,  Atsushi Okubo ,  Yoshikazu Yamada

    发明人： Tsuyoshi Fujimoto ,  Yumi Naito ,  Atsushi Okubo ,  Yoshikazu Yamada

    IPC分类号： H01S302

    CPC分类号： H01S5/2231 ,  B82Y20/00 ,  H01S5/2077 ,  H01S5/2206 ,  H01S5/34313 ,  H01S5/3432 ,  H01S2304/00

    摘要： In a self-aligned structure semiconductor laser in which a pair of optical guide layers are respectively formed on both faces of an active layer, the optical guide layers having a bandgap which is wider than that of the active layer, a pair of cladding layers are formed so as to sandwich the active layer and the optical guide layers, the cladding layers having a bandgap which is wider than bandgap of the optical guide layers, a pair of carrier blocking layers are respectively formed between the active layer and the optical guide layers, the carrier blocking layers having a bandgap which is wider than bandgaps of the active layer and the optical guide layers, and a current blocking layer having a stripe-like window is embedded in at least one of the optical guide layers, the current blocking layer is formed by selective growth. In this way, a window of a current blocking layer can be accurately formed and the fabrication yield can be improved while avoiding maleffects on other layers.

    摘要翻译： 在其中在有源层的两个表面上分别形成一对导光层的自对准结构半导体激光器中，具有比有源层宽的带隙的导光层，一对包覆层是 形成为夹持有源层和导光层，包层具有比导光层的带隙宽的带隙，在有源层和导光层之间分别形成一对载流子阻挡层， 具有比有源层和导光层的带隙宽的带隙的载流子阻挡层和具有条状窗口的电流阻挡层嵌入到至少一个导光层中，电流阻挡层是 通过选择性生长形成。以这种方式，可以精确地形成电流阻挡层的窗口，并且可以提高制造产率，同时避免对其他层的不良影响。

    LIGHT IRRADIATOR, IMAGE SCANNER, AND IMAGE FORMING APPARATUS
    10.
    发明申请
    LIGHT IRRADIATOR, IMAGE SCANNER, AND IMAGE FORMING APPARATUS 失效
    光照射器，图像扫描仪和图像形成装置

    公开(公告)号：US20130135859A1

    公开(公告)日：2013-05-30

    申请号：US13678936

    申请日：2012-11-16

    申请人： Tokiko INOUE ,  Mitsuru Nakajima ,  Tsuyoshi Fujimoto ,  Akihiro Iwamatsu ,  Chihiro Tanaka

    发明人： Tokiko INOUE ,  Mitsuru Nakajima ,  Tsuyoshi Fujimoto ,  Akihiro Iwamatsu ,  Chihiro Tanaka

    IPC分类号： F21V8/00

    CPC分类号： G02B6/0011 ,  G03G15/04054 ,  H04N1/02481 ,  H04N1/02855 ,  H04N1/02865 ,  H04N2201/02435

    摘要： A light irradiator including multiple point light sources arranged in a straight line, a light-transmissive light guiding member provided in front of the point light sources in an emission direction of beams of light emitted from the point light sources, the light guiding member guiding the beams of light in a predetermined direction toward a surface to be irradiated; and two or more protrusions protruding toward the point light sources, provided on a light entering surface of the light guiding member and arranged in the same direction as the point light sources. The light guiding member and the point light sources are positioned such that a distance between the protrusions provided to the light guiding member and irradiation surfaces of the point light sources is equal at two positions.

    摘要翻译： 一种包括以直线排列的多点光源的光照射器，沿点光源发射的光束的发射方向设置在点光源前面的透光导光部件，导光部件引导 沿预定方向的光束朝向待照射的表面; 以及设置在导光部件的光入射面上且与点光源相同的方向配置的朝向点光源突出的两个以上的突起。 导光构件和点光源被定位成使得提供给导光构件的突起和点光源的照射表面之间的距离在两个位置处相等。