发明授权
- 专利标题: Silicon nitride ceramic and process for forming the same
- 专利标题(中): 氮化硅陶瓷及其形成方法
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申请号: US633797申请日: 1996-04-10
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公开(公告)号: US5767026A公开(公告)日: 1998-06-16
- 发明人: Naoki Kondoh , Fumihiro Wakai , Yoshihiro Obata , Akira Yamakawa , Takao Nishioka , Masashi Yoshimura
- 申请人: Naoki Kondoh , Fumihiro Wakai , Yoshihiro Obata , Akira Yamakawa , Takao Nishioka , Masashi Yoshimura
- 申请人地址: JPX JPX
- 专利权人: Agency of Industrial Science and Technology,Sumitomo Electric Industries, Ltd.
- 当前专利权人: Agency of Industrial Science and Technology,Sumitomo Electric Industries, Ltd.
- 当前专利权人地址: JPX JPX
- 优先权: JPX6-264576 19941004
- 主分类号: B28B1/00
- IPC分类号: B28B1/00 ; C04B35/584 ; C04B35/593 ; C04B35/597 ; C04B35/599 ; C04B35/626
摘要:
There are provided a process for forming a silicon nitride sintered body, encompassing a sialon sintered body, by making much of the superplasticity of the sintered body intact as a simple material without formation thereof into a composite material, and a formed sintered body produced by the foregoing process. A silicon nitride sintered body (encompassing a sialon sintered body) having a relative density of at least 95% and a linear density of 120 to 250 in terms of the number of grains per 50 .mu.m in length in a two-dimensional cross section of the sintered body is formed through plastic deformation thereof at a strain rate of at most 10.sup.-1 /sec under a tensile or compressive pressure at a temperature of 1,300 to 1,700.degree. C. The formed sintered body has a degree of orientation of 5 to 80% as examined according to a method specified by Saltykov, a linear density of 80 to 200, and excellent mechanical properties especially at ordinary temperatures.
公开/授权文献
- US5153696A MOS FET with current sensing terminal 公开/授权日:1992-10-06
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