发明授权
US5770519A Copper reservoir for reducing electromigration effects associated with a conductive via in a semiconductor device 失效
用于减少与半导体器件中的导电通孔相关的电迁移效应的铜储存器

Copper reservoir for reducing electromigration effects associated with a
conductive via in a semiconductor device
摘要:
A multilayer semiconductor structure includes a conductive via. The conductive via includes a reservoir of metal having a high resistance to electromigration. The reservoir is made from a conformal layer of copper, or gold deposited over the via to form a copper, or gold plug located in the via. A barrier layer is provided between the reservoir and an insulating layer to prevent the reservoir from diffusing into the insulating layer. The barrier layer and reservoir may be deposited by sputtering, collimated sputtering, chemical vapor deposition (CVD), dipping, evaporating, or by other means. The barrier layer and reservoir may be etched by anisotropic dry etching, plasma-assisted etching, or other layer removal techniques.
信息查询
0/0