发明授权
US5770519A Copper reservoir for reducing electromigration effects associated with a
conductive via in a semiconductor device
失效
用于减少与半导体器件中的导电通孔相关的电迁移效应的铜储存器
- 专利标题: Copper reservoir for reducing electromigration effects associated with a conductive via in a semiconductor device
- 专利标题(中): 用于减少与半导体器件中的导电通孔相关的电迁移效应的铜储存器
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申请号: US464305申请日: 1995-06-05
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公开(公告)号: US5770519A公开(公告)日: 1998-06-23
- 发明人: Richard K. Klein , Darrell Erb , Steven Avanzino , Robin Cheung , Scott Luning , Bryan Tracy , Subhash Gupta , Ming-Ren Lin
- 申请人: Richard K. Klein , Darrell Erb , Steven Avanzino , Robin Cheung , Scott Luning , Bryan Tracy , Subhash Gupta , Ming-Ren Lin
- 申请人地址: CA Sunnyvale
- 专利权人: Advanced Micro Devices, Inc.
- 当前专利权人: Advanced Micro Devices, Inc.
- 当前专利权人地址: CA Sunnyvale
- 主分类号: H01L21/768
- IPC分类号: H01L21/768 ; H01L23/522 ; H01L23/532 ; H01L21/4763 ; H01L21/44
摘要:
A multilayer semiconductor structure includes a conductive via. The conductive via includes a reservoir of metal having a high resistance to electromigration. The reservoir is made from a conformal layer of copper, or gold deposited over the via to form a copper, or gold plug located in the via. A barrier layer is provided between the reservoir and an insulating layer to prevent the reservoir from diffusing into the insulating layer. The barrier layer and reservoir may be deposited by sputtering, collimated sputtering, chemical vapor deposition (CVD), dipping, evaporating, or by other means. The barrier layer and reservoir may be etched by anisotropic dry etching, plasma-assisted etching, or other layer removal techniques.
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