发明授权
- 专利标题： Semiconductor storage device
- 专利标题（中）： 半导体存储设备
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申请号： US916010申请日： 1997-08-21
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公开(公告)号： US5774410A公开(公告)日： 1998-06-30
- 发明人: Yasunobu Nakase
- 申请人： Yasunobu Nakase
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX8-113592 19960508
- 主分类号： G11C11/41
- IPC分类号： G11C11/41 ; G11C7/10 ; G11C7/12 ; G11C8/10 ; G11C8/16 ; G11C11/412 ; G11C11/419 ; G11C8/00
摘要：
It is an object to obtain a semiconductor storage device with two-port structure enabling reduction in circuit area. A crossbar switch CBS.sub.-- i (i=1-5) outputs a control signal for a zeroth port PORT.sub.-- 0 from an output portion CS.sub.-- i0 and outputs a control signal for a first port PORT.sub.-- 1 from an output portion CS.sub.-- i1 when a port exchange signal PSEL is at an L level, and outputs a control signal for the zeroth port PORT.sub.-- 0 from the output portion CS.sub.-- i1 and outputs a control signal for the first port PORT.sub.-- 1 from the output portion CS.sub.-- i0 when the port exchange signal PSEL is at an H level, thereby performing a port switching operation.
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