发明授权
US5788763A Manufacturing method of a silicon wafer having a controlled BMD
concentration
失效
具有受控BMD浓度的硅晶片的制造方法
- 专利标题： Manufacturing method of a silicon wafer having a controlled BMD concentration
- 专利标题（中）： 具有受控BMD浓度的硅晶片的制造方法
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申请号： US612214申请日： 1996-03-07
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公开(公告)号： US5788763A公开(公告)日： 1998-08-04
- 发明人: Kenro Hayashi , Ryuji Takeda , Katsuhiro Chaki , Ping Xin , Jun Yoshikawa , Hiroyuki Saito
- 申请人： Kenro Hayashi , Ryuji Takeda , Katsuhiro Chaki , Ping Xin , Jun Yoshikawa , Hiroyuki Saito
- 申请人地址： JPX Tokyo
- 专利权人： Toshiba Ceramics Co., Ltd.
- 当前专利权人： Toshiba Ceramics Co., Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX7-077093 19950309; JPX7-084524 19950317; JPX7-183250 19950628
- 主分类号： C30B15/00
- IPC分类号： C30B15/00 ; C30B33/00 ; H01L21/322 ; C30B25/02
摘要：
In a heat history initializing step, a heat treatment in performed in an atmosphere including at least one of hydrogen, helium, and argon while the temperature is increased in a range of 700.degree. C. to 1,000.degree. C. at a rate of 15.degree.-1,000.degree. C./min. In a controlled nuclei growing step, a heat treatment is performed in the above atmosphere while the temperature is kept constant in a range of 850.degree. C. to 980.degree. C. for 0.5-60 minutes.
公开/授权文献
- US5252213A Dry dialysate composition 公开/授权日：1993-10-12
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