发明授权
- 专利标题: Bidirectional lateral insulated gate bipolar transistor
- 专利标题(中): 双向横向绝缘栅双极晶体管
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申请号: US718842申请日: 1996-09-24
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公开(公告)号: US5793064A公开(公告)日: 1998-08-11
- 发明人: Hsin-hua Li
- 申请人: Hsin-hua Li
- 申请人地址: WI Milwaukee
- 专利权人: Allen Bradley Company, LLC
- 当前专利权人: Allen Bradley Company, LLC
- 当前专利权人地址: WI Milwaukee
- 主分类号: H01L29/06
- IPC分类号: H01L29/06 ; H01L29/739 ; H03K17/00 ; H03K17/567 ; H01L29/78
摘要:
A bidirectional lateral insulated gate bipolar transistor (IGBT) includes two gate electrodes. The IGBT can conduct current in two directions. The IGBT relies on a RESURF operation to provide high voltage blocking in both directions. The IGBT is symmetrical, having N-type drift region in contact with an oxide layer. A P-type region is provided above the N-type-drift region, having a portion more heavily doped with P-type dopants. The RESURF operation can be provided by a buried oxide layer or by a P substrate or by a horizontal PN junction. The IGBT can be utilized in various power operations, including a matrix switch or a voltage source converter.
公开/授权文献
- USD340540S Electric shaver 公开/授权日:1993-10-19