发明授权
US5793067A Hybrid transistor structure with widened leads for reduced thermal
resistance
失效
混合晶体管结构具有加宽的引线,用于降低热阻
- 专利标题: Hybrid transistor structure with widened leads for reduced thermal resistance
- 专利标题(中): 混合晶体管结构具有加宽的引线,用于降低热阻
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申请号: US675968申请日: 1996-07-05
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公开(公告)号: US5793067A公开(公告)日: 1998-08-11
- 发明人: Takeshi Miura , Teruyuki Shimura , Manabu Katoh
- 申请人: Takeshi Miura , Teruyuki Shimura , Manabu Katoh
- 申请人地址: JPX Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX7-307187 19951127
- 主分类号: H01L23/495
- IPC分类号: H01L23/495 ; H01L25/07 ; H01L31/0328
摘要:
An electrode lead of a transistor extends beyond other electrode leads of the transistor, is disposed adjacent to the corresponding electrode, and is disposed outside the other electrode leads for heat radiation. A wider part of the electrode lead may have a via hole or a thick metal plating for heat radiation. Further, the electrode is preferably grounded and is connected to an external input terminal to which heat is transferred.
公开/授权文献
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