发明授权
US5804476A Method of forming BiCMOS devices having mosfet and bipolar sections
therein
失效
在其中形成具有mosfet和双极部分的BiCMOS器件的方法
- 专利标题： Method of forming BiCMOS devices having mosfet and bipolar sections therein
- 专利标题（中）： 在其中形成具有mosfet和双极部分的BiCMOS器件的方法
-
申请号： US758848申请日： 1996-12-02
-
公开(公告)号： US5804476A公开(公告)日： 1998-09-08
- 发明人: Young-Soo Jang
- 申请人： Young-Soo Jang
- 申请人地址： KRX
- 专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人： Samsung Electronics Co., Ltd.
- 当前专利权人地址： KRX
- 优先权： KRX95-45627 19951130
- 主分类号： H01L27/06
- IPC分类号： H01L27/06 ; H01L21/265 ; H01L21/8249 ; H01L29/772 ; H01L21/8238
摘要：
A BiCMOS device and a manufacturing method thereof according to the present invention has a gate insulating layer of NMOSFET having non-uniform thickness. The thickness of the end portion of the gate insulating layer, which is near LDD regions, is thicker than that of center portion. Therefore, the GIDL and the gate-drain overlap capacitance is reduced. In addition, in case of the bipolar transistor of the BiCMOS device, there exists a portion of an oxide film below the side portion of the emitter polysilicon and over the side portions of the emitter region. Since this structure serves as a gate of field effect transistor, N- channel is produced in the emitter region when the emitter-base junction is reversely biased and thus the hot carrier reliability is improved.
公开/授权文献
- US4719572A Fuel injection control system for internal combustion engine 公开/授权日：1988-01-12
信息查询
IPC分类:
