A method for making a polycide-to-polysilicon capacitor having an improved breakdown voltage is described. A first layer of doped polysilicon is formed over a silicon substrate. A silicide layer is formed over the first layer of doped polysilicon. An oxide layer is formed over the silicide layer, and the silicide layer is then annealed. A second layer of doped polysilicon is formed over the oxide layer. The second layer of doped polysilicon is patterned to form a top plate of the capacitor. The oxide layer is removed except under the top plate of the capacitor, where it acts as a capacitor dielectric. The first layer of doped polysilicon and the silicide layer are patterned to form a polycide bottom plate of the capacitor.