发明授权
US5805500A Circuit and method for generating a read reference signal for
nonvolatile memory cells
失效
用于产生用于非易失性存储单元的读取参考信号的电路和方法
- 专利标题： Circuit and method for generating a read reference signal for nonvolatile memory cells
- 专利标题（中）： 用于产生用于非易失性存储单元的读取参考信号的电路和方法
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申请号： US877921申请日： 1997-06-18
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公开(公告)号： US5805500A公开(公告)日： 1998-09-08
- 发明人: Giovanni Campardo , Rino Micheloni , Marco Maccarrone
- 申请人： Giovanni Campardo , Rino Micheloni , Marco Maccarrone
- 申请人地址： ITX Agrate Brianza
- 专利权人： SGS-Thomson Microelectronics S.r.l.
- 当前专利权人： SGS-Thomson Microelectronics S.r.l.
- 当前专利权人地址： ITX Agrate Brianza
- 主分类号： G11C16/28
- IPC分类号： G11C16/28 ; G11C16/06
摘要：
The current flowing through a cell to be read, forming part of a nonvolatile memory array and presenting a characteristic with a predetermined slope, is amplified N times and compared with a reference current presenting a two portion characteristic: a first portion extending between a predetermined threshold value and a trigger value, and presenting a slope equal to that of the memory cell characteristic, and a second portion extending from the trigger value, and presenting a slope amplified N times with respect to that of the cell characteristic and therefore equal to the amplified slope of the cell.
公开/授权文献
- US5272039A Preparation of magnetic carrier particles 公开/授权日：1993-12-21
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