发明授权
US5810932A Plasma generating apparatus used for fabrication of semiconductor device
失效
用于制造半导体器件的等离子体发生装置
- 专利标题: Plasma generating apparatus used for fabrication of semiconductor device
- 专利标题(中): 用于制造半导体器件的等离子体发生装置
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申请号: US692283申请日: 1996-08-05
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公开(公告)号: US5810932A公开(公告)日: 1998-09-22
- 发明人: Yasuhiko Ueda , Hideaki Kawamoto , Hidenobu Miyamoto
- 申请人: Yasuhiko Ueda , Hideaki Kawamoto , Hidenobu Miyamoto
- 申请人地址: JPX Tokyo
- 专利权人: NEC Corporation
- 当前专利权人: NEC Corporation
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX7-326227 19951122
- 主分类号: H01J37/32
- IPC分类号: H01J37/32 ; H05H1/46 ; H05H1/00 ; C23F1/02
摘要:
An apparatus for generating plasma, includes a cylindrical vacuum chamber made of dielectric substance, the chamber being open only at a bottom thereof and having a height of 50 mm or smaller, at least one antenna coil disposed around the chamber for receiving high frequency power therein, and at least one electromagnetic coil disposed around the antenna coil. The cylindrical vacuum chamber may be replaced with a plate made of a dielectric substance. The apparatus is operative to carry out photoresist using etching without leaving any residue under a high selection ratio to the photoresist. In addition, the etching product does not tend to adhere to the vacuum chamber, and it would be easy to remove etching product from the vacuum chamber, even if the product adheres to the vacuum chamber.
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