发明授权
US5811352A Method of making reliable metal leads in high speed LSI semiconductors
using dummy leads
失效
使用虚拟引线在高速LSI半导体中制造可靠的金属引线的方法
- 专利标题： Method of making reliable metal leads in high speed LSI semiconductors using dummy leads
- 专利标题（中）： 使用虚拟引线在高速LSI半导体中制造可靠的金属引线的方法
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申请号： US857803申请日： 1996-11-06
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公开(公告)号： US5811352A公开(公告)日： 1998-09-22
- 发明人: Ken Numata , Kay Houston
- 申请人： Ken Numata , Kay Houston
- 申请人地址： TX Dallas
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 当前专利权人地址： TX Dallas
- 主分类号： H01L23/52
- IPC分类号： H01L23/52 ; H01L21/3205 ; H01L21/768 ; H01L23/522 ; H01L21/28
摘要：
A method for manufacturing semiconductor device having conductive metal leads 14 with improved reliability, and device for same, comprising conductive metal leads 14 on a substrate 12, a first insulating material 18 at least between the conductive metal leads 14, and dummy leads 16 proximate the conductive metal leads 14. Heat from the conductive metal leads 14 is transferable to the dummy leads 16, and the dummy leads 16 are capable of dissipating the heat. The first insulating material 18 has a dielectric constant of less than 3.5. An optional heatsink 22 may be formed in contact with the first dummy leads 16 to further dissipate the Joule's heat from the conductive metal leads 14. An advantage of the invention is to improve reliability of metal leads for circuits using low-dielectric constant materials.
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