发明授权
US5812814A Alternative flash EEPROM semiconductor memory system 失效
替代闪存EEPROM半导体存储器系统

  • 专利标题: Alternative flash EEPROM semiconductor memory system
  • 专利标题(中): 替代闪存EEPROM半导体存储器系统
  • 申请号: US200968
    申请日: 1994-02-24
  • 公开(公告)号: US5812814A
    公开(公告)日: 1998-09-22
  • 发明人: Hiroshi Sukegawa
  • 申请人: Hiroshi Sukegawa
  • 申请人地址: JPX Kanagawa-ken
  • 专利权人: Kabushiki Kaisha Toshiba
  • 当前专利权人: Kabushiki Kaisha Toshiba
  • 当前专利权人地址: JPX Kanagawa-ken
  • 优先权: JPX5-038112 19930226; JPX5-173987 19930714; JPX5-264725 19931022
  • 主分类号: G06F3/06
  • IPC分类号: G06F3/06 G11C16/10 G06F12/16
Alternative flash EEPROM semiconductor memory system
摘要:
A semiconductor memory system including a flash EEPROM comprises a first flash EEPROM included in the first memory drive, a second flash EEPROM included in the second memory drive, and means for controlling access to the first and second flash EEPROMs. The access controlling means includes an address converting means for converting a logical address from a host system into a physical address, according to first and second file management information which indicates correspondence between logical addresses and physical addresses of the first and second memory drives, respectively. The access controlling means further includes memory accessing means, coupled to each of the first and second flash EEPROMs, for accessing a selected EEPROM according to the physical address from the address converting means.
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