发明授权
- 专利标题： Method of doping with beryllium and method of fabricating semiconductor optical element doped with beryllium
- 专利标题（中）： 用铍掺杂的方法和掺杂铍的半导体光学元件的制造方法
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申请号： US510695申请日： 1995-08-03
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公开(公告)号： US5814534A公开(公告)日： 1998-09-29
- 发明人: Tatsuya Kimura , Takao Ishida
- 申请人： Tatsuya Kimura , Takao Ishida
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX6-184734 19940805
- 主分类号： C30B25/02
- IPC分类号： C30B25/02 ; H01L21/205 ; H01L33/30 ; H01S5/30 ; H01S5/323 ; H01L21/00
摘要：
In a method for doping with beryllium, when epitaxially growing a III-V compound semiconductor, (MeCP).sub.2 Be is employed as a dopant source. Since (MeCP).sub.2 Be has a lower vapor pressure than diethylberyllium (DEBe) which is conventionally employed as the dopant source doping control is facilitated. In addition, since (MeCP).sub.2 Be having a higher purity than DEBe is easily obtained, impurities such as oxygen are not incorporated into the active layer during doping, whereby a high quality p type layer is realized.
公开/授权文献
- US4992762A Ridge-trough waveguide 公开/授权日：1991-02-12
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