发明授权
- 专利标题: Method of manufacturing aluminum nitride
- 专利标题(中): 制造氮化铝的方法
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申请号: US923458申请日: 1997-09-04
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公开(公告)号: US5817274A公开(公告)日: 1998-10-06
- 发明人: Hiroaki Kotaka , Hidenori Yamaoka , Shuitsu Matsuo , Masahiro Ando , Mikiya Fujii , Hiroyuki Terada , Yasuo Misu
- 申请人: Hiroaki Kotaka , Hidenori Yamaoka , Shuitsu Matsuo , Masahiro Ando , Mikiya Fujii , Hiroyuki Terada , Yasuo Misu
- 申请人地址: JPX Tokyo JPX Tokyo
- 专利权人: Toshiba Ceramics Co., Ltd.,Toshiba Monofrax Co., Ltd.
- 当前专利权人: Toshiba Ceramics Co., Ltd.,Toshiba Monofrax Co., Ltd.
- 当前专利权人地址: JPX Tokyo JPX Tokyo
- 优先权: JPX7-206027 19950811
- 主分类号: C04B35/581
- IPC分类号: C04B35/581
摘要:
Disclosed is a method of manufacturing aluminum nitride, which comprises the steps of preparing a mixed gas consisting essentially of an ammonia gas and at least 0.5% by volume of a hydrocarbon gas, calcining .gamma.-Al.sub.2 O.sub.3 or a precursor thereof at 300.degree. to 1,100.degree. C. so as to prepare the .gamma.-Al.sub.2 O.sub.3 having a moisture content of 1 weight % or less; heating the calcined .gamma.-Al.sub.2 O.sub.3 in the mixed gas at a temperature of 1,200.degree. to 1,700.degree. C., thereby preparing porous aluminum nitride having a specific surface area of 10 m.sup.2 /g or more; and heat-treating the porous aluminum nitride in an atmosphere of an ammonia gas, or a mixed gas of an ammonia gas and an inert gas, at 1600.degree. to 2000.degree. C., so as to make contents of both carbon and oxygen contained in the aluminum nitride 1 weight % or less.
公开/授权文献
- US4180393A Composition for controlling plant growth in viticulture 公开/授权日:1979-12-25
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