发明授权
US5821014A Optical proximity correction method for intermediate-pitch features
using sub-resolution scattering bars on a mask
失效
用于中间间距特征的光学邻近校正方法使用掩模上的子分辨率散射棒
- 专利标题： Optical proximity correction method for intermediate-pitch features using sub-resolution scattering bars on a mask
- 专利标题（中）： 用于中间间距特征的光学邻近校正方法使用掩模上的子分辨率散射棒
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申请号： US808587申请日： 1997-02-28
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公开(公告)号： US5821014A公开(公告)日： 1998-10-13
- 发明人: Jang Fung Chen , Kurt Wampler , Thomas L. Laidig
- 申请人： Jang Fung Chen , Kurt Wampler , Thomas L. Laidig
- 申请人地址： CA Sunnyvale
- 专利权人： Microunity Systems Engineering, Inc.
- 当前专利权人： Microunity Systems Engineering, Inc.
- 当前专利权人地址： CA Sunnyvale
- 主分类号： G03F1/00
- IPC分类号： G03F1/00 ; G03F7/20 ; H01L21/027 ; G03F9/00
摘要：
A method for providing scattering bars for optical proximity effect correction on a mask used in a lithographic process. Scattering bar spacing and characteristics are adjusted and varied along with primary feature edge location in order to control CD's of features that are spaced a distance greater than the minimum pitch of a lithographic process but less than a nominal distance for two feature edges having independent scattering bars.
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