发明授权
- 专利标题: DRAM pass transistors
- 专利标题(中): DRAM通过晶体管
-
申请号: US901853申请日: 1997-07-29
-
公开(公告)号: US5822241A公开(公告)日: 1998-10-13
- 发明人: Amitava Chatterjee , Purnendu K. Mozumder
- 申请人: Amitava Chatterjee , Purnendu K. Mozumder
- 申请人地址: TX Dallas
- 专利权人: Texas Instruments Incorporated
- 当前专利权人: Texas Instruments Incorporated
- 当前专利权人地址: TX Dallas
- 主分类号: H01L29/78
- IPC分类号: H01L29/78 ; G11C11/404 ; H01L21/8242 ; H01L27/108 ; G11C11/401
摘要:
A pass transistor for a 1-transistor dynammic random access memory (DRAM) integrated circuit with a square root relation between threshold adjustment dose and substrate bias.
公开/授权文献
- US5273719A Urine treating device 公开/授权日:1993-12-28