发明授权
- 专利标题: Process for the production of silicon nitride sintered body
- 专利标题(中): 生产氮化硅烧结体的工艺
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申请号: US536446申请日: 1995-09-29
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公开(公告)号: US5827472A公开(公告)日: 1998-10-27
- 发明人: Masashi Yoshimura , Takeshi Satoh , Akira Yamaguchi , Akira Yamakawa
- 申请人: Masashi Yoshimura , Takeshi Satoh , Akira Yamaguchi , Akira Yamakawa
- 申请人地址: JPX
- 专利权人: Sumitomo Electric Industries, Ltd.
- 当前专利权人: Sumitomo Electric Industries, Ltd.
- 当前专利权人地址: JPX
- 优先权: JPX6-253330 19941019
- 主分类号: C04B35/584
- IPC分类号: C04B35/584
摘要:
A process for the production of a silicon nitride sintered body which comprises heat-treating a stock of silicon nitride sintered body within a temperature range of from the temperature at which the internal friction of the stock exhibits a peculiar peak maximum minus 150.degree. C. to that plus 150.degree. C. A representative used in the process is one which is produced by mixing powdered silicon nitride with powdery sintering aids so as to give a powder mixture comprising 5 to 15% by weight (in terms of oxide) of at least one element selected from the group consisting of rare earth elements and aluminum, 0.5 to 5% by weight (in terms of oxide) of at least one element selected from the group consisting of Mg, Ti and Ca and the balance of Si.sub.3 N.sub.4, molding the powder mixture, and sintering the resulting compact in a nitrogen-containing atmosphere at 1500.degree. to 1700.degree. C.
公开/授权文献
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