发明授权
US5828100A Insulated gate semiconductor device having trench gate and inverter
provided with the same
失效
具有沟槽栅极的绝缘栅半导体器件及其设置的反相器
- 专利标题： Insulated gate semiconductor device having trench gate and inverter provided with the same
- 专利标题（中）： 具有沟槽栅极的绝缘栅半导体器件及其设置的反相器
-
申请号： US714603申请日： 1996-09-16
-
公开(公告)号： US5828100A公开(公告)日： 1998-10-27
- 发明人: Akihiko Tamba , Yutaka Kobayashi
- 申请人： Akihiko Tamba , Yutaka Kobayashi
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi, Ltd.
- 当前专利权人： Hitachi, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX7-236532 19950914
- 主分类号： H01L29/78
- IPC分类号： H01L29/78 ; H01L27/04 ; H01L27/06 ; H01L27/088 ; H01L29/10 ; H01L29/739 ; H02M7/537 ; H01L27/02 ; H01L29/74
摘要：
An insulated gate semiconductor device has a semiconductor substrate having an irregular surface of raised portions and depressed portions, and a main device region and a protective circuit region. The protective circuit region is formed in a raised portion of the semiconductor substrate and includes a semiconductor device which is driven by an insulated gate electrode formed in a depressed portion of the semiconductor substrate. The raised portions and the depressed portions of the semiconductor substrate are formed by a trench etching method.
公开/授权文献
- US5261658A Bearing and mechanism for rotative support of rotating member 公开/授权日：1993-11-16
信息查询
IPC分类:
