公开(公告)号：US5828100A

公开(公告)日：1998-10-27

申请号：US714603

申请日：1996-09-16

申请人： Akihiko Tamba ,  Yutaka Kobayashi

发明人： Akihiko Tamba ,  Yutaka Kobayashi

IPC分类号： H01L29/78 ,  H01L27/04 ,  H01L27/06 ,  H01L27/088 ,  H01L29/10 ,  H01L29/739 ,  H02M7/537 ,  H01L27/02 ,  H01L29/74

CPC分类号： H01L29/1095 ,  H01L29/7397

摘要： An insulated gate semiconductor device has a semiconductor substrate having an irregular surface of raised portions and depressed portions, and a main device region and a protective circuit region. The protective circuit region is formed in a raised portion of the semiconductor substrate and includes a semiconductor device which is driven by an insulated gate electrode formed in a depressed portion of the semiconductor substrate. The raised portions and the depressed portions of the semiconductor substrate are formed by a trench etching method.

摘要翻译： 绝缘栅半导体器件具有半导体衬底，其具有凸起部分和凹陷部分的不规则表面，以及主器件区域和保护电路区域。 保护电路区域形成在半导体衬底的凸起部分中，并且包括由形成在半导体衬底的凹陷部分中的绝缘栅电极驱动的半导体器件。 半导体衬底的凸起部分和凹陷部分通过沟槽蚀刻方法形成。