发明授权
US5831928A Semiconductor memory device including a plurality of dynamic memory cells connected in series 失效
半导体存储器件包括串联连接的多个动态存储单元

Semiconductor memory device including a plurality of dynamic memory
cells connected in series
摘要:
A semiconductor device includes a memory cell array having memory cells arranged in a matrix form, a plurality of bit lines for communicating information to the memory cells, and a plurality of word lines crossing the bit lines to select among the memory cells, a plurality of sense amplifiers for amplifying data read out onto the bit lines, a plurality of data lines for transferring data amplified by the sense amplifiers to the outside of the cell array, the plurality of data lines including first and second wiring layers, a plurality of column select circuits for controlling connections of the plurality of data lines and the plurality of sense amplifiers, and a plurality of control signal lines connected to the plurality of column select circuits, the plurality of control lines including third and fourth wiring layers.
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