发明授权
US5831928A Semiconductor memory device including a plurality of dynamic memory
cells connected in series
失效
半导体存储器件包括串联连接的多个动态存储单元
- 专利标题: Semiconductor memory device including a plurality of dynamic memory cells connected in series
- 专利标题(中): 半导体存储器件包括串联连接的多个动态存储单元
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申请号: US744455申请日: 1996-11-07
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公开(公告)号: US5831928A公开(公告)日: 1998-11-03
- 发明人: Hiroaki Nakano , Takehiro Hasegawa , Yukihito Oowaki
- 申请人: Hiroaki Nakano , Takehiro Hasegawa , Yukihito Oowaki
- 申请人地址: JPX Kawasaki
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JPX Kawasaki
- 优先权: JPX7-295584 19951114
- 主分类号: G11C11/401
- IPC分类号: G11C11/401 ; G11C7/10 ; G11C11/407 ; G11C11/409 ; G11C11/4096 ; G11C8/00
摘要:
A semiconductor device includes a memory cell array having memory cells arranged in a matrix form, a plurality of bit lines for communicating information to the memory cells, and a plurality of word lines crossing the bit lines to select among the memory cells, a plurality of sense amplifiers for amplifying data read out onto the bit lines, a plurality of data lines for transferring data amplified by the sense amplifiers to the outside of the cell array, the plurality of data lines including first and second wiring layers, a plurality of column select circuits for controlling connections of the plurality of data lines and the plurality of sense amplifiers, and a plurality of control signal lines connected to the plurality of column select circuits, the plurality of control lines including third and fourth wiring layers.
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