Invention Grant
US5835334A Variable high temperature chuck for high density plasma chemical vapor
deposition
失效
用于高密度等离子体化学气相沉积的可变高温卡盘
- Patent Title: Variable high temperature chuck for high density plasma chemical vapor deposition
- Patent Title (中): 用于高密度等离子体化学气相沉积的可变高温卡盘
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Application No.: US724005Application Date: 1996-09-30
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Publication No.: US5835334APublication Date: 1998-11-10
- Inventor: Brian McMillin , Michael Barnes , Butch Berney , Huong Nguyen
- Applicant: Brian McMillin , Michael Barnes , Butch Berney , Huong Nguyen
- Applicant Address: CA Fremont
- Assignee: Lam Research
- Current Assignee: Lam Research
- Current Assignee Address: CA Fremont
- Main IPC: H01L21/68
- IPC: H01L21/68 ; H01L21/683 ; H02N13/00
Abstract:
An electrostatic chuck comprises an electrode cap with a dielectric layer for attracting and holding the back side of a semiconductor wafer positioned on the top surface of the dielectric layer, and a lower electrode. The electrostatic chuck is heated by resistive heating elements attached to or embedded within the chuck. The electrostatic chuck is cooled by circulating liquid coolant through the body of the chuck. Coolant gas is provided at the back side of the semiconductor wafer to improve thermal transfer. A feedback control mechanism maintains the chuck, and consequently the wafer, at a predetermined temperature by actively controlling both the heating and the cooling functions.
Public/Granted literature
- US4591134A Arrangement for cleaning a lance head of a lance introducible into a metallurgical vessel Public/Granted day:1986-05-27
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