According to the present invention, a method for producing a semiconductor device in which an active region made of a crystalline silicon film is formed on an insulating surface of a substrate is provided. The method includes the steps of: forming a first amorphous silicon film on the substrate; selectively introducing at least one kind of catalyst elements for promoting the crystallization of the first amorphous silicon film into a part of the first amorphous silicon film before or after forming the first amorphous silicon film; heating the first amorphous silicon film so as to crystallize the first amorphous silicon film in a direction substantially parallel to a surface of the substrate with respect to a region surrounding a region into which the catalyst elements are selectively introduced; forming an insulating thin film in a region on the crystalline silicon film in which crystals are grown in a direction substantially parallel to the surface of the substrate so as to partially remove the insulating thin film and the crystalline silicon film so that a linear boundary is formed along a crystal-growing direction of the crystalline silicon film; forming a second amorphous silicon film on the crystalline silicon film; and crystallizing the second amorphous silicon film by heating or by irradiating a laser beam or an intense light.