发明授权
- 专利标题： Production method for an insulation layer functioning as an intermetal dielectric
- 专利标题（中）： 用作金属间电介质的绝缘层的制造方法
-
申请号： US907210申请日： 1997-08-06
-
公开(公告)号： US5837611A公开(公告)日： 1998-11-17
- 发明人: Zvonimir Gabric , Oswald Spindler , Thomas Grassl
- 申请人： Zvonimir Gabric , Oswald Spindler , Thomas Grassl
- 申请人地址： DEX Munich
- 专利权人： Siemens Aktiengesellschaft
- 当前专利权人： Siemens Aktiengesellschaft
- 当前专利权人地址： DEX Munich
- 优先权： DEX19631743.6 19960806
- 主分类号： H01L21/316
- IPC分类号： H01L21/316 ; H01L21/768 ; H01L23/522 ; H01L21/00
摘要：
When large-scale integrated circuits are produced, pronounced differences in height occur within conductor track levels. Those extreme topographies lead to difficulties during photo-lithographic processes, since there is a direct relationship between resolution and depth of focus. A production method for applying an insulation layer functioning as an intermetal dielectric is based on an ozone-activated selective deposition of silicon oxide. The conductor tracks are completely encapsulated with an insulation layer, so that bulges do not occur above upper edges of the conductor tracks.
公开/授权文献
- USD341289S Microwave oven 公开/授权日：1993-11-16
信息查询
IPC分类:
