Invention Grant
- Patent Title: Circuit arrangement including photoelectric transducers for supplying a high voltage driving signal to an insulated gate bipolar transistor
- Patent Title (中): 电路装置包括用于向绝缘栅双极晶体管提供高电压驱动信号的光电转换器
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Application No.: US807738Application Date: 1997-03-04
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Publication No.: US5844248APublication Date: 1998-12-01
- Inventor: Tai-Her Yang
- Applicant: Tai-Her Yang
- Assignee: Yang; Tai-Her
- Current Assignee: Yang; Tai-Her
- Main IPC: H01L31/10
- IPC: H01L31/10 ; H01L29/739 ; H01L29/78 ; H01L31/12 ; H03K17/785 ; G02B27/00
Abstract:
An insulated gate bipolar transistor (IGBT) is supplied with high voltage electric power by a power supply circuit that includes a plurality of photoelectric transducers arranged to output a high voltage, low current driving signal, and an illumination component optically coupled with the photoelectric transducers and supplied with low voltage electric power, thus allowing the insulated gate bipolar transistor to be used in low voltage applications that would otherwise result in a sudden increase in switch loss and burnout of the transistor.
Public/Granted literature
- US4113771A Process for the purification of citric acid Public/Granted day:1978-09-12
Information query
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