A thin-film transistor including a gate electrode provided on a substrate, a gate insulation film provided on the gate electrode, an operative semiconductor film provided on the gate insulation film, and a channel protection film provided on the operative semiconductor film. Semiconductor contact portions are disposed so that they are covered by the channel protection film on either side of the operative semiconductor film. A source electrode and a drain electrode are connected to the semiconductor contact portions on either side of the channel protection film. The thin-film transistor can minimize the stray capacitance due to the overlapping of the source and drain electrodes with the gate electrode and is excellent in the contact characteristic. Also, a method for fabricating a thin-film transistor is disclosed.