发明授权
- 专利标题: Photovoltaic element with zno layer having increasing fluorine content in layer thickness direction
- 专利标题(中): 具有层厚度方向上氟含量增加的zno层的光电元件
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申请号: US638501申请日: 1996-04-26
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公开(公告)号: US5849108A公开(公告)日: 1998-12-15
- 发明人: Toshimitsu Kariya , Keishi Saito
- 申请人: Toshimitsu Kariya , Keishi Saito
- 申请人地址: JPX Tokyo
- 专利权人: Canon Kabushiki Kaisha
- 当前专利权人: Canon Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 主分类号: H01L31/0224
- IPC分类号: H01L31/0224 ; H01L31/075 ; H01L31/18 ; H01L31/20 ; H01L31/0264 ; H01L31/036 ; H01L31/0392
摘要:
A photovoltaic element has a substrate with a conductive surface, a zinc oxide layer containing fluorine and a non-single-crystal semiconductor layer, where the fluorine content of the zinc oxide layer (i) varies across the thickness of the layer, (ii) is at a minimum at the interface with the substrate and (iii) increases toward the semiconductor layer.
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