发明授权
US5852583A Semiconductor memory device that can realize high speed data read out 失效
可实现高速数据读出的半导体存储器件

Semiconductor memory device that can realize high speed data read out
摘要:
Following latching of a word line select signal by a latch circuit, a transfer gate is turned off. When a word line is selected, the voltage applied to the latch circuit is shifted to a desired level to apply a desired voltage to the word line from a word line driver. As a result, a predecode signal is applied to a small size buffering circuit to be transmitted to the word line driver at a potential level between Vcc-GND. Therefore, the parasitic capacitance accompanying a predecode signal is reduced.
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