发明授权
US5852583A Semiconductor memory device that can realize high speed data read out
失效
可实现高速数据读出的半导体存储器件
- 专利标题: Semiconductor memory device that can realize high speed data read out
- 专利标题(中): 可实现高速数据读出的半导体存储器件
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申请号: US848391申请日: 1997-05-08
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公开(公告)号: US5852583A公开(公告)日: 1998-12-22
- 发明人: Yasuhiko Taito , Shinji Kawai , Shinichi Kobayashi , Akinori Matsuo , Masashi Wada
- 申请人: Yasuhiko Taito , Shinji Kawai , Shinichi Kobayashi , Akinori Matsuo , Masashi Wada
- 申请人地址: JPX Tokyo
- 专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人: Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX8-116427 19960510
- 主分类号: G11C17/00
- IPC分类号: G11C17/00 ; G11C8/08 ; G11C16/06 ; G11C8/00
摘要:
Following latching of a word line select signal by a latch circuit, a transfer gate is turned off. When a word line is selected, the voltage applied to the latch circuit is shifted to a desired level to apply a desired voltage to the word line from a word line driver. As a result, a predecode signal is applied to a small size buffering circuit to be transmitted to the word line driver at a potential level between Vcc-GND. Therefore, the parasitic capacitance accompanying a predecode signal is reduced.
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