发明授权
- 专利标题: Process for the production of a photovoltaic element
- 专利标题(中): 制造光电元件的方法
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申请号: US857905申请日: 1997-05-16
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公开(公告)号: US5859397A公开(公告)日: 1999-01-12
- 发明人: Hirofumi Ichinose , Akio Hasebe , Tsutomu Murakami , Satoshi Shinkura , Yukie Ueno
- 申请人: Hirofumi Ichinose , Akio Hasebe , Tsutomu Murakami , Satoshi Shinkura , Yukie Ueno
- 申请人地址: JPX Tokyo
- 专利权人: Canon Kabushiki Kaisha
- 当前专利权人: Canon Kabushiki Kaisha
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX8-146542 19960517
- 主分类号: H01L31/0392
- IPC分类号: H01L31/0392 ; H01L31/076 ; H01L31/20 ; C07C1/00 ; C23F13/00 ; C25F1/00 ; C30B30/02
摘要:
A process for producing a photovoltaic element, said process comprising the steps of: providing a photovoltaic element comprising a lower electrode layer comprising a metallic layer comprising aluminum or an aluminum compound and a transparent and electrically conductive layer, a photoelectric conversion semiconductor layer, and a transparent electrode layer stacked in the named order on an electrically conductive surface of a substrate, and immersing said photovoltaic element in an electrolyte solution to passivate an short-circuited current path defect present in said photovoltaic element by the action of an electric field, wherein said electrolyte solution has a chlorine ion content of 0.03 mol/l or less.
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