发明授权
- 专利标题： Optimized structures for dummy fill mask design
- 专利标题（中）： 虚拟填充面罩设计的优化结构
-
申请号： US579605申请日： 1995-12-26
-
公开(公告)号： US5861342A公开(公告)日： 1999-01-19
- 发明人: Calvin T. Gabriel , Milind G. Weling
- 申请人： Calvin T. Gabriel , Milind G. Weling
- 申请人地址： CA San Jose
- 专利权人： VLSI Technology, Inc.
- 当前专利权人： VLSI Technology, Inc.
- 当前专利权人地址： CA San Jose
- 主分类号： H01L21/3105
- IPC分类号： H01L21/3105 ; H01L21/461 ; H01L21/44
摘要：
A method of improving the planarity of spin-on-glass layers in semiconductor wafer processing is disclosed. Gaps in between active conductive traces in a trace layer that exceed a predetermined distance are provided with dummy lines having a specific geometry in order to improve the planarity achieved in subsequently applied spin-on glass layers. In some embodiments, the predetermined distance is greater than approximately 1 micrometer, as for example in the range of approximately 3 to 6 micrometers. In some applications, both the active conductive traces and the dummy lines are formed from a metallic material that is deposited in one single step with a passivation layer being deposited over both the conductive traces and the raised lines prior to application of the spin-on glass layer.
公开/授权文献
- US5102266A Offshore support structure 公开/授权日：1992-04-07
信息查询
IPC分类:
