发明授权
- 专利标题： Semiconductor device and method for manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US28672申请日： 1998-02-24
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公开(公告)号： US5864180A公开(公告)日： 1999-01-26
- 发明人: Shizue Hori , Yoshiro Baba , Hiroyuki Sugaya , Hiroshi Naruse
- 申请人： Shizue Hori , Yoshiro Baba , Hiroyuki Sugaya , Hiroshi Naruse
- 申请人地址： JPX Kawasaki
- 专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人： Kabushiki Kaisha Toshiba
- 当前专利权人地址： JPX Kawasaki
- 优先权： JPX9-043579 19970227
- 主分类号： H01L21/205
- IPC分类号： H01L21/205 ; H01L21/20 ; H01L29/04 ; H01L21/36
摘要：
A semiconductor device and a method for manufacturing the same, in which a leak current generated in a pn junction formed between a silicon substrate and an epitaxial layer can be reduced. A silicon oxide film is formed on a silicon substrate having a (100) crystal plane. The silicon oxide film is patterned to form an opened portion and an inclined surface on a pattern edge of the silicon oxide film. The inclined surface forms an angle of 54.74.+-.5.degree. with the silicon substrate. An epitaxial layer is formed in the opened portion by selective epitaxial growth.
公开/授权文献
- USD362887S Golf club head 公开/授权日：1995-10-03
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