公开(公告)号：US5864180A

公开(公告)日：1999-01-26

申请号：US28672

申请日：1998-02-24

申请人： Shizue Hori ,  Yoshiro Baba ,  Hiroyuki Sugaya ,  Hiroshi Naruse

发明人： Shizue Hori ,  Yoshiro Baba ,  Hiroyuki Sugaya ,  Hiroshi Naruse

IPC分类号： H01L21/205 ,  H01L21/20 ,  H01L29/04 ,  H01L21/36

CPC分类号： H01L21/2022 ,  H01L29/045 ,  Y10S257/923

摘要： A semiconductor device and a method for manufacturing the same, in which a leak current generated in a pn junction formed between a silicon substrate and an epitaxial layer can be reduced. A silicon oxide film is formed on a silicon substrate having a (100) crystal plane. The silicon oxide film is patterned to form an opened portion and an inclined surface on a pattern edge of the silicon oxide film. The inclined surface forms an angle of 54.74.+-.5.degree. with the silicon substrate. An epitaxial layer is formed in the opened portion by selective epitaxial growth.

摘要翻译： 可以减少在硅衬底和外延层之间形成的pn结中产生的漏电流的半导体器件及其制造方法。 在具有（100）晶面的硅衬底上形成氧化硅膜。 图案化氧化硅膜以在氧化硅膜的图案边缘上形成开口部分和倾斜表面。 倾斜表面与硅衬底形成54.74 +/- 5°的角度。 通过选择性外延生长在开口部分形成外延层。

公开(公告)号：US5926725A

公开(公告)日：1999-07-20

申请号：US853882

申请日：1997-05-09

申请人： Hidenori Saihara ,  Hiroshi Naruse ,  Hiroyuki Sugaya ,  Shizue Hori

发明人： Hidenori Saihara ,  Hiroshi Naruse ,  Hiroyuki Sugaya ,  Shizue Hori

IPC分类号： H01L21/28 ,  H01L21/311 ,  H01L21/3213 ,  H01L21/324 ,  H01L21/331 ,  H01L29/73 ,  H01L29/732 ,  H01L21/306

CPC分类号： H01L21/31116

摘要： In a method of manufacturing a semiconductor device, to form an opening in an insulation film such as a silicon oxide on a semiconductor substrate in a reverse tapered sectional configuration such that no gap is formed between a side surface of an epitaxial growth layer formed in the opening and the opening in the insulation film, the insulation film having the opening is subjected to a thermal process in an atmosphere of non-oxidizing gas including hydrogen elements such as hydrogen, silane or disilane gas. An opening is formed in the insulation film on the semiconductor substrate using isotropic etching. As a result of the above-described thermal process, decomposition of a silicon oxide proceeds from the interface between the insulation film and the semiconductor substrate at a side-wall of the opening to eventually form the opening in a reverse tapered sectional configuration at least in an edge portion thereof.

摘要翻译： 在制造半导体器件的方法中，在反向锥形截面结构中在半导体衬底上形成诸如氧化硅的绝缘膜的开口，使得在形成于该半导体器件的外延生长层的侧表面之间不形成间隙 开口和开口，具有开口的绝缘膜在包括诸如氢，硅烷或乙硅烷气体的氢元素的非氧化气体的气氛中进行热处理。 使用各向同性蚀刻在半导体衬底上的绝缘膜上形成开口。 作为上述热处理的结果，氧化硅的分解从开口的侧壁处的绝缘膜和半导体衬底之间的界面进行，以最终形成反向锥形截面构造的开口，至少在 其边缘部分。

公开(公告)号：US5877540A

公开(公告)日：1999-03-02

申请号：US766856

申请日：1996-12-13

申请人： Hiroshi Naruse ,  Hiroyuki Sugaya ,  Hidenori Saihara ,  Yoshiro Baba

发明人： Hiroshi Naruse ,  Hiroyuki Sugaya ,  Hidenori Saihara ,  Yoshiro Baba

IPC分类号： H01L29/73 ,  H01L21/20 ,  H01L21/331 ,  H01L21/76 ,  H01L29/10 ,  H01L29/732 ,  H01L27/082 ,  H01L27/102 ,  H01L29/70

CPC分类号： H01L29/66287 ,  H01L29/1004

摘要： A semiconductor device. A semiconductor substrate has a first conductivity. A first insulating layer is on the semiconductor substrate and has an opening so that a portion of the semiconductor substrate is exposed. A semiconductor layer has a second conductivity on the portion. A region in said semiconductor layer prevents a leakage current caused by a minute defect and faceting.

摘要翻译： 半导体器件。 半导体衬底具有第一导电性。 第一绝缘层位于半导体衬底上，并且具有使半导体衬底的一部分露出的开口。 半导体层在该部分上具有第二导电性。 所述半导体层中的区域防止由微小缺陷引起的漏电流。

公开(公告)号：US5733810A

公开(公告)日：1998-03-31

申请号：US820530

申请日：1997-03-19

申请人： Yoshiro Baba ,  Hiroshi Naruse

发明人： Yoshiro Baba ,  Hiroshi Naruse

IPC分类号： H01L21/336 ,  H01L29/10 ,  H01L29/423 ,  H01L29/78 ,  H01L21/70

CPC分类号： H01L29/7827 ,  H01L29/1037 ,  H01L29/4236 ,  H01L29/66666 ,  H01L29/4232 ,  H01L29/4238

摘要： A groove is formed on a semiconductor substrate. A mask material layer is so formed on the surface of the semiconductor substrate as to open a groove region. With the mask material layer used as a mask, a semiconductor layer is selectively formed on the semiconductor substrate exposed with the inner wall surface of the groove. Then, the mask material layer is removed. An insulating film is formed on the semiconductor layer formed on the inner wall surface of the groove and the surface of the semiconductor substrate. The groove is buried with a conductor.

摘要翻译： 在半导体衬底上形成沟槽。 掩模材料层形成在半导体衬底的表面上以打开沟槽区域。 在掩模材料层用作掩模的情况下，半导体层被选择性地形成在用凹槽的内壁表面暴露的半导体衬底上。 然后，除去掩模材料层。 在形成在凹槽的内壁表面和半导体衬底的表面上的半导体层上形成绝缘膜。 凹槽埋入导体。

公开(公告)号：US5963822A

公开(公告)日：1999-10-05

申请号：US832779

申请日：1997-04-04

申请人： Hidenori Saihara ,  Hiroshi Naruse ,  Hiroyuki Sugaya

发明人： Hidenori Saihara ,  Hiroshi Naruse ,  Hiroyuki Sugaya

IPC分类号： H01L29/73 ,  C30B25/04 ,  H01L21/20 ,  H01L21/205 ,  H01L21/324 ,  H01L21/331 ,  H01L29/732

CPC分类号： H01L21/02532 ,  C30B25/04 ,  H01L21/02381 ,  H01L21/02609 ,  H01L21/0262 ,  H01L21/02639

摘要： According to a method of fabricating a selective epitaxial film, a thin insulating film serving as a mask is formed on the entire surface of a semiconductor substrate having a (100) plane. An opening portion reaching the semiconductor substrate is formed in a desired region of the thin insulating film. An epitaxial film is selectively grown in the opening portion. The semiconductor substrate having the selective epitaxial film formed thereon is annealed at at least a pressure of 1,000 Pa and at least a temperature of 800.degree. C. to fill a gap on the contact surface between the thin insulating film and the selective epitaxial film.

摘要翻译： 根据制造选择性外延膜的方法，在具有（100）面的半导体衬底的整个表面上形成用作掩模的薄绝缘膜。 到达半导体衬底的开口部分形成在薄绝缘膜的期望区域中。 在开口部选择性地生长外延膜。 在其上形成有选择性外延膜的半导体衬底在至少1000Pa的压力和至少800℃的温度下进行退火，以填充薄绝缘膜和选择性外延膜之间的接触表面上的间隙。

公开(公告)号：US20100140719A1

公开(公告)日：2010-06-10

申请号：US12563247

申请日：2009-09-21

申请人： Hiroyuki YAMASAKI ,  Kenji Kojima ,  Hiroshi Naruse ,  Hideaki Harakawa

发明人： Hiroyuki YAMASAKI ,  Kenji Kojima ,  Hiroshi Naruse ,  Hideaki Harakawa

IPC分类号： H01L27/06 ,  H01L21/28

CPC分类号： H01L29/7833 ,  H01L21/823807 ,  H01L27/0629 ,  H01L28/20 ,  H01L29/4966 ,  H01L29/518

摘要： A semiconductor device includes a substrate which includes an element region and an isolation region, a transistor portion which includes a gate insulating film formed on the element region, and a gate electrode having a metal film formed on the gate insulating film and a first semiconductor film formed on the metal film, and a resistance element portion which includes a second semiconductor film formed above the substrate and formed of the same material as that of the first semiconductor film, and a cavity formed between the substrate and the second semiconductor film.

摘要翻译： 半导体器件包括：衬底，其包括元件区域和隔离区域;晶体管部分，其包括形成在元件区域上的栅极绝缘膜;以及栅电极，具有形成在栅极绝缘膜上的金属膜和第一半导体膜 形成在所述金属膜上的电阻元件部分，以及电阻元件部分，其包括在所述基板上形成并由与所述第一半导体膜相同的材料形成的第二半导体膜，以及形成在所述基板和所述第二半导体膜之间的空腔。

公开(公告)号：US20070191615A1

公开(公告)日：2007-08-16

申请号：US10594497

申请日：2005-03-31

申请人： Atsuo Otsuji ,  Hiroshi Naruse ,  Mitsuo Nakamura

发明人： Atsuo Otsuji ,  Hiroshi Naruse ,  Mitsuo Nakamura

IPC分类号： C07D327/00

CPC分类号： C08G75/06 ,  G02B1/04

摘要： The present invention is to provide a polymerizable compound which can be a raw material for a resin having high transparency, good heat resistance and mechanical strength required for optical components such as plastic lenses and the like, while attaining a high refractive index (nd) exceeding 1.7, and an optical component composed of such a resin. Disclosed is a compound represented by the general formula (3), wherein, in the formula, M represents a metal atom; X1 and X2 each independently represent a sulfur atom or an oxygen atom; R1 represents a divalent organic group; m represents an integer of 0 or 1 or more; p represents an integer of from 1 to n; q represents an integer of from 1 to (n-p); n represents a valence of a metal atom M; Yq each independently represent an inorganic or organic residue; and when q is 2 or more, Yq may be bonded to one another for forming a ring structure with the intermediary of a metal atom M.

摘要翻译： 本发明提供一种聚合性化合物，其可以成为具有高透明度，高耐热性和塑料透镜等的光学部件所需的机械强度的树脂的原料，同时获得高折射率（nd） 1.7，以及由这种树脂构成的光学部件。 公开了由通式（3）表示的化合物，其中在式中，M表示金属原子; X 1和X 2各自独立地表示硫原子或氧原子; R 1表示二价有机基团; m表示0或1以上的整数， p表示1〜n的整数， q表示1〜（n-p）的整数。 n表示金属原子M的化合价; Yq各自独立地表示无机或有机残基; 当q为2以上时，可以将Yq彼此结合形成具有金属原子M的中间环状结构。

公开(公告)号：US06758890B2

公开(公告)日：2004-07-06

申请号：US10088352

申请日：2002-03-15

申请人： Yoriaki Matsuzaki ,  Kenichi Fujii ,  Osamu Kohgo ,  Hiroshi Naruse ,  Tsutami Misawa

发明人： Yoriaki Matsuzaki ,  Kenichi Fujii ,  Osamu Kohgo ,  Hiroshi Naruse ,  Tsutami Misawa

IPC分类号： C09D1102

CPC分类号： C09D11/328 ,  C09B43/16 ,  C09B62/043 ,  C09B62/08

摘要： Aqueous ink for ink jet recording comprising a coloring matter and an aqueous medium, in which at least one of dyes represented by the formula (A) or a salt thereof is contained as the coloring matter wherein R1 and R3, independently from each other, represent a hydrogen atom, an optionally substituted alkyl group, an optionally substituted alkoxy group, an amino group, a hydroxyl group or a halogen atom, R2 and R4, independently from each other, represent a hydrogen atom, an optionally substituted alkyl group, an optionally substituted aryl group or an aralkyl group, A represents an optionally substituted phenyl group or naphthyl group, X represents a divalent bonding group free from a saturated carbon ring, and m and n, independently from each other, represent an integer of 1 to 4.

摘要翻译： 用于喷墨记录的水性油墨包括着色剂和水性介质，其中含有至少一种由式（A）表示的染料或其盐作为着色剂，其中R1和R3彼此独立地表示 氢原子，任选取代的烷基，任选取代的烷氧基，氨基，羟基或卤素原子，R 2和R 4彼此独立地表示氢原子，任选取代的烷基，任选取代的 芳基或芳烷基，A表示任选取代的苯基或萘基，X表示不含饱和碳环的二价键合基​​团，m和n彼此独立地表示1〜4的整数。

公开(公告)号：US5665616A

公开(公告)日：1997-09-09

申请号：US731012

申请日：1996-10-09

申请人： Koji Kimura ,  Hiroshi Naruse

发明人： Koji Kimura ,  Hiroshi Naruse

IPC分类号： H01L21/331 ,  H01L21/8222 ,  H01L21/8248 ,  H01L21/8249 ,  H01L27/06 ,  H01L29/732 ,  H01L21/265

CPC分类号： H01L27/0623 ,  H01L21/8249

摘要： In the Bi-CMOS process of manufacturing a semiconductor device by an effective combination of a bipolar transistor manufacturing process and a CMOS transistor manufacturing process in the case of the formation of a silicide film on a Bi-CMOS device, in which the bipolar transistor having an inner base region made of a silicon film grown by epitaxy and the MOS transistor having silicide formed on the gate electrode, source region and drain region in a self-aligned manner therewith are formed on the same semiconductor substrate, while the silicon film of the inner base region is epitaxially grown in a step, a silicon film is also epitaxially grown on the source/drain regions at the same time in the same step.

摘要翻译： 在双极晶体管制造工艺和CMOS晶体管制造工艺的有效组合的Bi-CMOS工艺中，在Bi-CMOS器件上形成硅化物膜的情况下，其中双极晶体管具有 通过外延生长的硅膜制成的内基区域和在其自对准方式上形成在栅电极，源区和漏区上的具有硅化物的MOS晶体管形成在同一半导体衬底上，而硅膜 内部基极区域在步骤中外延生长，在同一步骤中同时在源极/漏极区域上外延生长硅膜。

公开(公告)号：US5545751A

公开(公告)日：1996-08-13

申请号：US358566

申请日：1994-12-14

申请人： Chiyuki Kusuda ,  Masayuki Furuya ,  Masaru Wada ,  Yoshihiro Irizato ,  Hiroshi Naruse ,  Teruyuki Nagata

发明人： Chiyuki Kusuda ,  Masayuki Furuya ,  Masaru Wada ,  Yoshihiro Irizato ,  Hiroshi Naruse ,  Teruyuki Nagata

IPC分类号： C07C213/00 ,  C07C217/92 ,  C07C209/22

CPC分类号： C07C213/00 ,  C07C217/92

摘要： A process for the preparation of 4-methoxy-2,2',6-trimethyldiphenylamine, which comprises heating and reacting 2,6-dimethylcyclohexanone and 2-methyl-4-methoxyaniline in the presence of a dehydrogenation catalyst while removing the resultant hydrogen and water from the reaction system.

摘要翻译： 一种制备4-甲氧基-2,2'，6-三甲基二苯胺的方法，该方法包括在脱氢催化剂的存在下加热和反应2,6-二甲基环己酮和2-甲基-4-甲氧基苯胺，同时除去所得氢气， 来自反应体系的水。