Invention Grant
US5869882A Zener diode structure with high reverse breakdown voltage 失效
具有高反向击穿电压的齐纳二极管结构

Zener diode structure with high reverse breakdown voltage
Abstract:
A zener diode capable of breakdown at much higher voltages than in the prior art is fabricated by providing a semiconductor substrate of a first conductivity type having an opposite conductivity type first tank disposed therein. The first tank includes relatively lower and relatively higher resistivity portions, the relatively lower doped portion isolating the relatively higher doped portion from the substrate. A first region of first conductivity type is disposed in the higher doped portion and a second region of opposite conductivity type and more highly doped than the first tank is spaced from the first region. Structure is provided between the first and second regions for repelling majority charge carriers associated with the opposite conductivity type which can be a field plate spaced from the first tank; a portion at the surface of the first tank having the first conductivity type; or a tank, of first conductivity type disposed in the first tank, abutting the first region, extending more deeply into the first tank than does the first region and more lightly doped than the first region. In accordance with a further embodiment, the diode includes a semiconductor substrate, a first tank portion disposed in the substrate and a second tank portion disposed in the first tank portion as in the prior embodiments. A first region of first conductivity type is disposed in the second tank portion and extends into the first tank portion. A second region of opposite conductivity type more highly doped than the first tank portion is disposed in the first tank portion and spaced from the first region.
Information query
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件;其他类目中不包括的电固体器件(使用半导体器件的测量入G01;一般电阻器入H01C;磁体、电感器、变压器入H01F;一般电容器入H01G;电解型器件入H01G9/00;电池组、蓄电池入H01M;波导管、谐振器或波导型线路入H01P;线路连接器、汇流器入H01R;受激发射器件入H01S;机电谐振器入H03H;扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R;一般电光源入H05B;印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K;在具有特殊应用的电路中使用的半导体器件见应用相关的小类)
H01L29/00 专门适用于整流、放大、振荡或切换,并具有至少一个电位跃变势垒或表面势垒的半导体器件;具有至少一个电位跃变势垒或表面势垒,例如PN结耗尽层或载流子集结层的电容器或电阻器;半导体本体或其电极的零部件(H01L31/00至H01L47/00,H01L51/05优先;除半导体或其电极之外的零部件入H01L23/00;由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00)
H01L29/66 .按半导体器件的类型区分的
H01L29/86 ..只能通过对一个或多个通有待整流,放大、振荡或切换的电流的电极供给电流的变化或施加电位的变化方可进行控制的(H01L29/96优先)
H01L29/861 ...二极管
H01L29/866 ....齐纳二极管
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