Invention Grant
- Patent Title: Method for etching a semiconductor substrate and etching system
- Patent Title (中): 蚀刻半导体衬底和蚀刻系统的方法
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Application No.: US863371Application Date: 1997-05-27
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Publication No.: US5874366APublication Date: 1999-02-23
- Inventor: Roland Sporer , Josef Mathuni , Alexander Gschwandtner
- Applicant: Roland Sporer , Josef Mathuni , Alexander Gschwandtner
- Applicant Address: DEX Munich
- Assignee: Siemens Aktiengesellschaft
- Current Assignee: Siemens Aktiengesellschaft
- Current Assignee Address: DEX Munich
- Priority: DEX19621399.1 19960528
- Main IPC: H01L21/306
- IPC: H01L21/306 ; H01L21/00
Abstract:
The method and system of the invention allow etching even relatively thick layers on the rear side of a semiconductor substrate where the front side is resist-free. An etching solution is sprayed in fine droplets onto the rear side of the semiconductor substrate. The semiconductor substrate may thereby be heated to a temperature .ltoreq.100.degree. C.
Information query
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