公开(公告)号：US07665416B2

公开(公告)日：2010-02-23

申请号：US11450871

申请日：2006-06-12

申请人： Alexander Gschwandtner ,  Josef Mathuni ,  Alexander Mattheus ,  Stephan Schneider ,  Jürgen Sellmaier ,  Heinz Steinhardt

发明人： Alexander Gschwandtner ,  Josef Mathuni ,  Alexander Mattheus ,  Stephan Schneider ,  Jürgen Sellmaier ,  Heinz Steinhardt

IPC分类号： C23C16/00 ,  H01J7/24

CPC分类号： H01J37/32192 ,  H05H1/30

摘要： An apparatus is described for generating excited and/or ionized particles in a plasma with a generator for generating an electromagnetic wave and an excitation chamber with a plasma zone in which the excited and/or ionized particles are formed. At least one excitation chamber is arranged in an insulating material off-center relative to a ring-cylindrical outer conductor.

摘要翻译： 描述了一种用于产生电磁波的发生器的等离子体中产生激发和/或离子化的颗粒的装置，以及具有形成激发和/或离子化的颗粒的等离子体区域的激发室。 至少一个激励室相对于环形圆柱形外部导体偏心地布置在绝缘材料中。

公开(公告)号：US20070189918A1

公开(公告)日：2007-08-16

申请号：US11704978

申请日：2007-02-12

申请人： Alexander Gschwandtner

发明人： Alexander Gschwandtner

IPC分类号： A61L9/18

CPC分类号： H01J37/32192 ,  H05H1/46 ,  H05H2001/4637 ,  H05H2001/4697

摘要： The invention relates to a device for generating excited and/or ionized particles in a plasma from a process gas, which comprises a generator for generating an electromagnetic wave, a waveguide, and a gas discharge chamber with a gas discharge space in which the excited and/or ionized particles are formed, and comprising a dielectric in which the gas discharge space is formed, the gas discharge chamber being arranged inside the waveguide. In order to be able to use the largest possible microwave powers while achieving a long service life, the dielectric forms an end base from which side walls branch off so as to form the gas discharge space. The electromagnetic wave can also be coupled into the end base.

摘要翻译： 本发明涉及一种用于在来自工艺气体的等离子体中产生激发和/或离子化颗粒的装置，其包括用于产生电磁波的发生器，波导和具有气体放电空间的气体放电室， /或电离粒子，并且包括其中形成气体放电空间的电介质，气体放电室布置在波导内。 为了能够使用尽可能大的微波功率，同时实现长的使用寿命，电介质形成端基，侧壁从该基底分支，以形成气体放电空间。 电磁波也可以耦合到端基。

公开(公告)号：US20140179117A1

公开(公告)日：2014-06-26

申请号：US14131943

申请日：2012-07-12

申请人： Jurgen Niess ,  Wilfried Lerch ,  Wilhelm Kegel ,  Alexander Gschwandtner

发明人： Jurgen Niess ,  Wilfried Lerch ,  Wilhelm Kegel ,  Alexander Gschwandtner

IPC分类号： H01L21/02

CPC分类号： H01L21/02238 ,  C23C8/10 ,  C23C8/36 ,  C23C8/38 ,  H01J37/32192 ,  H01J37/3222 ,  H01L21/02164 ,  H01L21/02252 ,  H01L21/67115 ,  H01L31/02167 ,  H01L31/18 ,  Y02E10/50

摘要： A method for forming an oxide layer on a substrate is described, wherein a plasma is generated adjacent to at least one surface of the substrate by means of microwaves from a gas containing oxygen, wherein the microwaves are coupled into the gas by a magnetron via at least one microwave rod, which is arranged opposite to the substrate and comprises an outer conductor and an inner conductor. During the formation of the oxide layer, the mean microwave power density is set to P=0.8-10 W/cm2, the plasma duration is set to t=0.1 to 600 s, the pressure is set to p=2.67-266.64 Pa (20 to 2000 mTorr) and a distance between substrate surface and microwave rod is set to d=5-120 mm. The above and potentially further process conditions are matched to each other such that the substrate is held at a temperature below 200° C. and an oxide growth is induced on the surface of the substrate facing the plasma.

摘要翻译： 描述了在衬底上形成氧化物层的方法，其中通过来自含氧气体的微波在邻近于衬底的至少一个表面处产生等离子体，其中微波通过磁控管通过 至少一个微波棒，其布置成与衬底相对并且包括外部导体和内部导体。 在形成氧化物层期间，将平均微波功率密度设定为P = 0.8-10W / cm 2，将等离子体持续时间设定为t = 0.1〜600s，将压力设定为p = 2.67-266.64Pa（ 20〜2000mTorr），将基板表面与微波棒之间的距离设定为d = 5-120mm。 上述和潜在的另外的工艺条件彼此匹配，使得衬底保持在低于200℃的温度，并且在面向等离子体的衬底的表面上诱导氧化物生长。

公开(公告)号：US20070031599A1

公开(公告)日：2007-02-08

申请号：US11493083

申请日：2006-07-26

申请人： Alexander Gschwandtner ,  Martin Knapp

发明人： Alexander Gschwandtner ,  Martin Knapp

IPC分类号： C23C16/00 ,  C23C16/40

CPC分类号： H01L21/02181 ,  C23C16/308 ,  C23C16/405 ,  C23C18/1216 ,  H01L21/02148 ,  H01L21/02178 ,  H01L21/02183 ,  H01L21/02186 ,  H01L21/02189 ,  H01L21/02192 ,  H01L21/02194 ,  H01L21/02205 ,  H01L21/02274 ,  H01L21/0228 ,  H01L21/3141 ,  H01L21/31645 ,  Y02T50/67

摘要： The present invention relates to the use of a highly concentrated solution of one or more hafnium alkoxides as precursors for hafnium oxide and hafnium oxynitride layers. The present invention relates in particular to the use of a 30 to 90% strength by weight solution of one or more hafnium alkoxides for producing hafnium oxide and hafnium oxynitride layers for CVD or ALD methods. In addition, the invention relates to a process for the production of a hafnium oxide and hafnium oxynitride layer on an article to be coated, and a hafnium alkoxide solution which contains 30 to 90% by weight of one or more hafnium alkoxides. In a further embodiment of the invention, hafnium is replaced by zirconium in said compounds.

摘要翻译： 本发明涉及一种或多种铪醇盐的高浓度溶液作为氧化铪和铪氧氮化物层的前体的用途。 本发明特别涉及使用一种或多种铪醇盐的30-90％重量浓度来制备氧化铪和氮氧化铪层用于CVD或ALD方法。 此外，本发明涉及在待涂覆的制品上生产氧化铪和铪氧氮化物层的方法，以及含有30至90重量％的一种或多种铪醇盐的矾土醇溶液。 在本发明的另一个实施方案中，所述化合物中的铪被锆代替。

公开(公告)号：US06232196B1

公开(公告)日：2001-05-15

申请号：US09264167

申请日：1999-03-05

申请人： Ivo Raaijmakers ,  Christopher François Lilian Pomarède ,  Cornelius Alexander van der Jengd ,  Alexander Gschwandtner ,  Andreas Grassl

发明人： Ivo Raaijmakers ,  Christopher François Lilian Pomarède ,  Cornelius Alexander van der Jengd ,  Alexander Gschwandtner ,  Andreas Grassl

IPC分类号： H01L2120

CPC分类号： C23C16/45504 ,  C23C16/045 ,  C23C16/24 ,  C23C16/455 ,  C23C16/45502 ,  C23C16/45591 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/28525 ,  H01L21/28556 ,  H01L21/76877 ,  H01L29/66181 ,  H01L29/78

摘要： A method is disclosed for depositing silicon with high deposition rates and good step coverage. The process is performed at high pressures, including close to atmospheric pressures, at temperatures of greater than about 650° C. Silane and hydrogen are flowed over a substrate in a single-wafer chamber. Advantageously, the process maintains good step coverage and high deposition rates (e.g., greater that 50 nn/min) even when dopant gases are added to the process, resulting in commercially practicable rates of deposition for conductive silicon. Despite the high deposition rates, step coverage is sufficient to deposit polysilicon into extremely deep trenches and vias with aspect ratios as high as 40:1, filling such structures without forming voids or keyholes.

摘要翻译： 公开了一种用于沉积具有高沉积速率和良好的台阶覆盖率的硅的方法。 该方法在大于约650℃的温度下在高压（包括接近大气压）下进行。硅烷和氢气在单晶片室中流过衬底。 有利的是，即使将掺杂剂气体加入到该方法中，该方法保持良好的阶梯覆盖率和高的沉积速率（例如，大于50nn / min），从而导致商业上可行的导电硅沉积速率。 尽管沉积速率高，但步长覆盖足以将多晶硅沉积到具有高达40:1的纵横比的极深沟槽和通孔中，填充这种结构而不形成空隙或键孔。

公开(公告)号：US20080003763A1

公开(公告)日：2008-01-03

申请号：US11853400

申请日：2007-09-11

申请人： Ivo Raaijmakers ,  Christophe Pomarede ,  Cornelius Jeugd ,  Alexander Gschwandtner ,  Andreas Grassi

发明人： Ivo Raaijmakers ,  Christophe Pomarede ,  Cornelius Jeugd ,  Alexander Gschwandtner ,  Andreas Grassi

IPC分类号： H01L21/334

CPC分类号： C23C16/45504 ,  C23C16/045 ,  C23C16/24 ,  C23C16/455 ,  C23C16/45502 ,  C23C16/45591 ,  H01L21/02381 ,  H01L21/02532 ,  H01L21/02573 ,  H01L21/0262 ,  H01L21/28525 ,  H01L21/28556 ,  H01L21/76877 ,  H01L29/66181 ,  H01L29/78

摘要： A method is disclosed for depositing silicon with high deposition rates and good step coverage. The process is performed at high pressures, including close to atmospheric pressures, at temperatures of greater than about 650° C. Silane and hydrogen are flowed over a substrate in a single-wafer chamber. Advantageously, the process maintains good step coverage and high deposition rates (e.g., greater that 50 nn/min) even when dopant gases are added to the process, resulting in commercially practicable rates of deposition for conductive silicon. Despite the high deposition rates, step coverage is sufficient to deposit polysilicon into extremely deep trenches and vias with aspect ratios as high as 40:1, filling such structures without forming voids or keyholes.

摘要翻译： 公开了一种用于沉积具有高沉积速率和良好的台阶覆盖率的硅的方法。 该方法在大于约650℃的温度下在高压（包括接近大气压）下进行。硅烷和氢气在单晶片室中流过衬底。 有利的是，即使将掺杂剂气体加入到该方法中，该方法保持良好的阶梯覆盖率和高的沉积速率（例如，大于50nn / min），从而导致商业上可行的导电硅沉积速率。 尽管沉积速率高，但步长覆盖足以将多晶硅沉积到具有高达40:1的纵横比的极深沟槽和通孔中，填充这种结构而不形成空隙或键孔。

公开(公告)号：US20060252240A1

公开(公告)日：2006-11-09

申请号：US11414414

申请日：2006-04-28

申请人： Alexander Gschwandtner ,  Juergen Holz ,  Michael Schrenk

发明人： Alexander Gschwandtner ,  Juergen Holz ,  Michael Schrenk

IPC分类号： H01L21/20

CPC分类号： H01L21/02274 ,  C23C16/345 ,  C23C16/45523 ,  C23C16/45542 ,  C23C16/511 ,  H01L21/0217 ,  H01L21/02178 ,  H01L21/02181 ,  H01L21/02183 ,  H01L21/02211 ,  H01L21/02258 ,  H01L21/0228 ,  H01L21/318 ,  H01L21/3185 ,  H01L21/76807 ,  H01L23/5223 ,  H01L28/40 ,  H01L2924/0002 ,  H01L2924/00

摘要： Process for forming a dielectric. The process may include forming the dielectric on a metallization and capacitor arrangement. The process allows the direct application of a dielectric layer to a copper-containing metallization. Accordingly, two process gases may be excited with different plasma powers per unit substrate area, or one process gas may be excited with a plasma and another process gas may not be excited.

摘要翻译： 电介质形成工艺。 该方法可以包括在金属化和电容器布置上形成电介质。 该方法允许将电介质层直接施加到含铜金属化。 因此，可以用每单位衬底面积的不同等离子体功率激发两种处理气体，或者一种工艺气体可以用等离子体激发，另一种工艺气体可能不被激发。

公开(公告)号：US5727017A

公开(公告)日：1998-03-10

申请号：US632364

申请日：1996-04-10

申请人： Michael Maurer ,  Wilfried Lerch ,  Alexander Gschwandtner

发明人： Michael Maurer ,  Wilfried Lerch ,  Alexander Gschwandtner

IPC分类号： G01J5/00 ,  G01J5/10 ,  G01N25/00

CPC分类号： G01J5/08 ,  G01J5/0003 ,  G01J5/0007 ,  G01J5/0896

摘要： A method and apparatus for measuring the emission coefficient of a semiconductor material for light of wavelength .lambda. having photon energy less than the semiconductor bandgap energy is introduced. The reflection coefficient for the light of wavelength .lambda. is measured while the semiconductor material is being irradiated with sufficient light having photon energy greater than the bandgap energy that the semiconductor material transmits little light of wavelength .lambda., and the emission coefficient is calculated from the measured reflection coefficient. The temperature of the semiconductor material can be calculated from the emission coefficient and the measured intensity of the thermally emitted radiation of wavelength .lambda..

摘要翻译： 引入了用于测量具有小于半导体带隙能量的光子能量的波长λ的光的半导体材料的发射系数的方法和装置。 在半导体材料被足够的光照射的情况下测量波长λ的光的反射系数，该足够的光具有比半导体材料透射较小的波长λ的光的带隙能量大的带隙能量，并且从测量的反射计算发射系数 系数。 半导体材料的温度可以根据发射系数和波长λ的热辐射辐射的测量强度来计算。

公开(公告)号：US5399389A

公开(公告)日：1995-03-21

申请号：US94337

申请日：1993-07-20

申请人： Konrad Hieber ,  Jasper Von Tomkewitsch ,  Oswald Spindler ,  Helmuth Treichel ,  Zvonimir Gabric ,  Alexander Gschwandtner

发明人： Konrad Hieber ,  Jasper Von Tomkewitsch ,  Oswald Spindler ,  Helmuth Treichel ,  Zvonimir Gabric ,  Alexander Gschwandtner

IPC分类号： C30B29/18 ,  H01L21/316 ,  H01L21/3205 ,  H01L21/768 ,  B05D3/06 ,  H01L21/02

CPC分类号： H01L21/02164 ,  H01L21/02216 ,  H01L21/02271 ,  H01L21/02304 ,  H01L21/02315 ,  H01L21/31612 ,  H01L21/76819

摘要： In the ozone-activated deposition of insulating layers, different growth rates can be achieved on differently constituted surfaces. When the surfaces of the structured silicon substrates lying at different levels are differently constituted or, respectively, are intentionally varied such that the SiO.sub.2 insulating layer grows more slowly on the higher surfaces than on the more deeply disposed surfaces and when deposition is carried out until the surfaces of the rapidly growing and slowly growing layer regions form a step-free, planar level, a local and global planarization is achieved.

摘要翻译： 在绝缘层的臭氧活化沉积中，可以在不同构造的表面上实现不同的生长速率。 当不同层次的结构硅衬底的表面被不同地构成或分别有意地改变，使得SiO 2绝缘层在较高表面上比在更深的设置表面上更缓慢地生长，并且当沉积被执行直到 快速生长和缓慢生长的层区域的表面形成无梯度的平面水平，实现局部和全局平坦化。

公开(公告)号：US09252011B2

公开(公告)日：2016-02-02

申请号：US14131943

申请日：2012-07-12

申请人： Juergen Niess ,  Wilfried Lerch ,  Wilhelm Kegel ,  Alexander Gschwandtner

发明人： Juergen Niess ,  Wilfried Lerch ,  Wilhelm Kegel ,  Alexander Gschwandtner

IPC分类号： H01L21/31 ,  H01L21/02 ,  C23C8/10 ,  C23C8/36 ,  C23C8/38 ,  H01J37/32 ,  H01L21/67 ,  H01L31/0216 ,  H01L31/18

CPC分类号： H01L21/02238 ,  C23C8/10 ,  C23C8/36 ,  C23C8/38 ,  H01J37/32192 ,  H01J37/3222 ,  H01L21/02164 ,  H01L21/02252 ,  H01L21/67115 ,  H01L31/02167 ,  H01L31/18 ,  Y02E10/50

摘要： A method for forming an oxide layer on a substrate is described, wherein a plasma is generated adjacent to at least one surface of the substrate by means of microwaves from a gas containing oxygen, wherein the microwaves are coupled into the gas by a magnetron via at least one microwave rod, which is arranged opposite to the substrate and comprises an outer conductor and an inner conductor. During the formation of the oxide layer, the mean microwave power density is set to P=0.8-10 W/cm2, the plasma duration is set to t=0.1 to 600 s, the pressure is set to p=2.67-266.64 Pa (20 to 2000 mTorr) and a distance between substrate surface and microwave rod is set to d=5-120 mm. The above and potentially further process conditions are matched to each other such that the substrate is held at a temperature below 200° C. and an oxide growth is induced on the surface of the substrate facing the plasma.

摘要翻译： 描述了在衬底上形成氧化物层的方法，其中通过来自含氧气体的微波在邻近于衬底的至少一个表面处产生等离子体，其中微波通过磁控管通过 至少一个微波棒，其布置成与衬底相对并且包括外部导体和内部导体。 在形成氧化物层期间，将平均微波功率密度设定为P = 0.8-10W / cm 2，将等离子体持续时间设定为t = 0.1〜600s，将压力设定为p = 2.67-266.64Pa（ 20〜2000mTorr），将基板表面与微波棒之间的距离设定为d = 5-120mm。 上述和潜在的另外的工艺条件彼此匹配，使得衬底保持在低于200℃的温度，并且在面向等离子体的衬底的表面上诱导氧化物生长。