发明授权
- 专利标题: Sequential staggered type thin film transistor
- 专利标题(中): 顺序交错型薄膜晶体管
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申请号: US912790申请日: 1997-08-18
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公开(公告)号: US5875009A公开(公告)日: 1999-02-23
- 发明人: Hideo Shibahara
- 申请人: Hideo Shibahara
- 申请人地址: JPX Tokyo
- 专利权人: NEC Corporation
- 当前专利权人: NEC Corporation
- 当前专利权人地址: JPX Tokyo
- 优先权: JPX8-223857 19960826
- 主分类号: G02F1/136
- IPC分类号: G02F1/136 ; G02F1/1368 ; H01L29/786 ; H01L29/04
摘要:
There is herein disclosed a sequential staggered type thin film transistor in a liquid crystal display comprising a glass substrate, and a gate line, a drain line, a pixel electrode and the sequential staggered type thin film transistor formed on the glass substrate, wherein the sequential staggered type thin film transistor has a structure in which an amorphous silicon layer, a gate insulating film and a gate electrode are laminated in turn on a source electrode and a drain electrode, and the width of an outgoing line connecting the source electrode of the thin film transistor to the pixel electrode is smaller than that of the source electrode.
公开/授权文献
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