发明授权
- 专利标题： Oxide layer patterned by vapor phase etching
- 专利标题（中）： 通过气相蚀刻图案化的氧化物层
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申请号： US865258申请日： 1997-05-29
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公开(公告)号： US5876879A公开(公告)日： 1999-03-02
- 发明人: Richard L. Kleinhenz , Wesley C. Natzle , Chienfan Yu
- 申请人： Richard L. Kleinhenz , Wesley C. Natzle , Chienfan Yu
- 申请人地址： NY Armonk
- 专利权人： International Business Machines Corporation
- 当前专利权人： International Business Machines Corporation
- 当前专利权人地址： NY Armonk
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; G03F9/00
摘要：
Hydrogen fluoride undercut of oxide layers may be reduced by using a low pressure mixture of gaseous hydrogen fluoride and gaseous ammonia mixture. Organic photoresists can be used as a masking material when using the gaseous hydrogen fluoride/ammonia mixture without resulting in an enhanced reaction rate. In addition, because of the reaction conditions, the dimensions in the oxide layer being etched can be specifically sized smaller than openings made in the overcoating masking material.
公开/授权文献
- US5243228A Substrate bias voltage generator circuit 公开/授权日：1993-09-07
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