发明授权
US5876893A Ferrite carrier, two-component developer and electrostatic imaging
method using the developer
失效
铁氧体载体，双组分显影剂和使用显影剂的静电成像方法
- 专利标题： Ferrite carrier, two-component developer and electrostatic imaging method using the developer
- 专利标题（中）： 铁氧体载体，双组分显影剂和使用显影剂的静电成像方法
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申请号： US805609申请日： 1997-02-25
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公开(公告)号： US5876893A公开(公告)日： 1999-03-02
- 发明人: Masahisa Ochiai , Masumi Asanae , Tsutomu Saitoh , Takashi Hayano
- 申请人： Masahisa Ochiai , Masumi Asanae , Tsutomu Saitoh , Takashi Hayano
- 申请人地址： JPX Tokyo
- 专利权人： Hitachi Metals, Ltd.
- 当前专利权人： Hitachi Metals, Ltd.
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX8-044601 19960301; JPX8-044602 19960301; JPX8-044604 19960301; JPX8-044606 19960301; JPX8-119840 19960515
- 主分类号： G03G9/08
- IPC分类号： G03G9/08 ; G03G9/10 ; G03G9/107
摘要：
An Li--Mn ferrite carrier comprising 2 to 15 mol % of Li.sub.2 O, 5 to 30 mol % of MnO and 60 to 90 mol % of Fe.sub.2 O.sub.3. The carrier may contain at least one sintering aid selected from the group consisting of CaO, Na.sub.2 O, SiO.sub.2, V.sub.2 O.sub.5, Al.sub.2 O.sub.3, As.sub.2 O.sub.3, Bi.sub.2 O.sub.3, Sb.sub.2 O.sub.3 and B.sub.2 O.sub.3 to improve the surface properties thereof. The carrier may be made sensitive to the intensity of electric field by regulating the specific volume resistivities at 200 V/cm and 10 kV/cm within the specific ranges. This carrier is particularly suitable in the reversal developing method, and in the developing method where an A.C. bias voltage is superimposed to a D.C. bias voltage.
公开/授权文献
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