- 专利标题: Low temperature integrated metallization process and apparatus
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申请号: US561605申请日: 1995-11-21
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公开(公告)号: US5877087A公开(公告)日: 1999-03-02
- 发明人: Roderick Craig Mosely , Hong Zhang , Fusen Chen , Ted Guo
- 申请人: Roderick Craig Mosely , Hong Zhang , Fusen Chen , Ted Guo
- 申请人地址: CA Santa Clara
- 专利权人: Applied Materials, Inc.
- 当前专利权人: Applied Materials, Inc.
- 当前专利权人地址: CA Santa Clara
- 主分类号: H01L21/285
- IPC分类号: H01L21/285 ; C23C14/56 ; C23C16/54 ; H01L21/28 ; H01L21/3205 ; H01L21/677 ; H01L21/768 ; H01L21/441
摘要:
The present invention relates generally to an improved process for providing uniform step coverage on a substrate and planarization of metal layers to form continuous, void-free contacts or vias in sub-half micron applications. In one aspect of the invention, a refractory layer is deposited onto a substrate having high aspect ratio contacts or vias formed thereon. A CVD metal layer is then deposited onto the refractory layer at low temperatures to provide a conformal wetting layer for a PVD metal. Next, a PVD metal is deposited onto the previously formed CVD metal layer at a temperature below that of the melting point temperature of the metal. The resulting CVD/PVD metal layer is substantially void-free. The metallization process is preferably carried out in an integrated processing system that includes both a PVD and CVD processing chamber so that once the substrate is introduced into a vacuum environment, the metallization of the vias and contacts occurs without the formation of an oxide layer over the CVD Al layer.
公开/授权文献
- US5108952A Method of depositing a tungsten film 公开/授权日:1992-04-28