发明授权
- 专利标题： Method for fabrication of a semiconductor device
- 专利标题（中）： 半导体器件的制造方法
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申请号： US83674申请日： 1998-05-22
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公开(公告)号： US5880006A公开(公告)日： 1999-03-09
- 发明人: Xi-Wei Lin , Henry Lee , Ian R. Harvey
- 申请人： Xi-Wei Lin , Henry Lee , Ian R. Harvey
- 申请人地址： CA San Jose
- 专利权人： VLSI Technology, Inc.
- 当前专利权人： VLSI Technology, Inc.
- 当前专利权人地址： CA San Jose
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L21/84
摘要：
A method for forming a semiconductor structure on an active area mesa with minimal loss of field oxide deposited in isolation trenches adjacent the mesa. The trench insulating material is protected by an etch barrier layer having at least a partial resistance to etchants used in further device processing steps. The barrier layer may also be deposited over the surface of the substrate to protect it from damage during device processing. The barrier layer may be removed by an etchant having a selectivity for the barrier layer over that of the surrounding device elements. Final processing of the device may be completed once the barrier layer is removed.
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