Invention Grant
US5882378A Method to detect metal impurities in the semiconductor process gases
失效
检测半导体工艺气体中的金属杂质的方法
- Patent Title: Method to detect metal impurities in the semiconductor process gases
- Patent Title (中): 检测半导体工艺气体中的金属杂质的方法
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Application No.: US900190Application Date: 1997-07-25
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Publication No.: US5882378APublication Date: 1999-03-16
- Inventor: Kohei Tarutani , Itsuko Suzuki
- Applicant: Kohei Tarutani , Itsuko Suzuki
- Assignee: L'Air Liquide Societe Anonyme Pour L'Etude et L'Exploitation des Procedes Georges Claude
- Current Assignee: L'Air Liquide Societe Anonyme Pour L'Etude et L'Exploitation des Procedes Georges Claude
- Main IPC: G01N1/22
- IPC: G01N1/22 ; G01N33/00 ; G01N33/20 ; B01D47/02
Abstract:
A process to detect metal impurities in a gas or gas mixture including the steps of directing the gas or gas mixture through non-metallic pipings to a sampling device and sampling the gas or gas mixture for metal impurities detection, wherein the sampling device is close to an inlet and/or outlet of a machine employing the gas or gas mixture as a processing gas, the machine being surrounded by a booth containing a gaseous atmosphere which is continuously circulated in the booth, partially renewing said atmosphere continuously, and exhausting excess atmosphere.
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