发明授权
- 专利标题： Method of manufacturing semiconductor components
- 专利标题（中）： 制造半导体元件的方法
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申请号： US910055申请日： 1997-08-12
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公开(公告)号： US5882963A公开(公告)日： 1999-03-16
- 发明人: Martin Kerber , Helmut Klose , Andreas Vom Felde
- 申请人： Martin Kerber , Helmut Klose , Andreas Vom Felde
- 申请人地址： DEX Munich
- 专利权人： Siemens Aktiengesellschaft
- 当前专利权人： Siemens Aktiengesellschaft
- 当前专利权人地址： DEX Munich
- 优先权： DEX4441898.1 19941124
- 主分类号： H01L21/302
- IPC分类号： H01L21/302 ; H01L21/3065 ; H01L21/768 ; H01L23/522 ; H01L21/44
摘要：
A method of manufacturing a semiconductor component, wherein capacitances occurring between contacts, interconnects or metallizations are reduced by filling cavities with air or gas is provided. The cavities are produced between the semiconductor material and a passivation layer in a region wherein the interconnects are surrounded by dielectric and are subsequently closed by a further passivation layer.
公开/授权文献
- US4803720A Dual plane cross point switch architecture for a micro-PBX 公开/授权日：1989-02-07
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