A shaper (2) is arranged within a shaping vessel (1). A raw material for a crystal is inserted into the shaping vessel (1) and a crystal melt (5) is formed by setting it in a predetermined atmosphere and heating it. A mechanical force F1 is applied to the crystal melt (5), which is present on the upper surface of the shaper (2), by a pressuring member (4) from above. The crystal melt (5) has nowhere to escape but a gap (3) formed by the shaper(2), so it is injected into that gap (3) as shown by the arrow. This method of fabricating a shaped crystal is suitable for fabricating a monocrystal or multicrystal semiconductor from a material such as silicon, germanium, or bismuth telluride.