Cooling mechanism for optical fiber
    1.
    发明授权
    Cooling mechanism for optical fiber 失效
    光纤冷却机构

    公开(公告)号:US4572609A

    公开(公告)日:1986-02-25

    申请号:US679105

    申请日:1984-12-07

    摘要: A mechanism for cooling optical fibers which include optical fibers, metal netting wound around the fibers to conduct heat therefrom, and a sheath in which the fibers and netting are inserted. In accordance with one embodiment, the sheath and netting are spaced from each other so as to permit cooling air to flow therebetween to cool the fibers. In another embodiment, the netting is connected to a cooler by a heat connected element so that heat in the fibers is drawn to the cooler through the heat conductive element to cool the fibers.

    摘要翻译: 一种用于冷却光纤的机构,包括光纤,围绕纤维缠绕的金属网,用于传导热量,以及插入纤维和网的护套。 根据一个实施例,鞘和网彼此间隔开,以便允许冷却空气在其间流动以冷却纤维。 在另一个实施例中,网通过热连接元件连接到冷却器,使得纤维中的热量通过导热元件被吸引到冷却器以冷却纤维。

    Thermoelectric component and thermoelectric cooling device
    3.
    发明授权
    Thermoelectric component and thermoelectric cooling device 失效
    热电元件和热电冷却装置

    公开(公告)号:US6002081A

    公开(公告)日:1999-12-14

    申请号:US888467

    申请日:1997-07-07

    申请人: Shiro Sakuragi

    发明人: Shiro Sakuragi

    CPC分类号: H01L35/30 H01L35/32

    摘要: A thermoelectric component is provided. The component comprises a partition plate with electrical insulation, P-type and n-type thermoelectrical semiconductor elements that are equal in number and retained with juts in the partition plate, flat metallic electrodes connected to the cold junction of the p-type and n-type thermoelectric semiconductor elements, and T-shaped metallic electrodes connected to the hot junction of the p-type and n-type thermoelectric semiconductor elements.

    摘要翻译: 提供热电部件。 该部件包括具有电绝缘性的隔板,数量相同且在隔板中保持突起的P型和n型热电半导体元件,连接到p型和n-型的冷端的平坦金属电极, 型热电半导体元件和连接到p型和n型热电半导体元件的热接点的T形金属电极。

    Method of fabricating shaped crystals by overhead-pressure liquid
injection
    4.
    发明授权
    Method of fabricating shaped crystals by overhead-pressure liquid injection 失效
    通过塔顶压力液体注射制造成形晶体的方法

    公开(公告)号:US5885345A

    公开(公告)日:1999-03-23

    申请号:US817873

    申请日:1997-05-21

    申请人: Shiro Sakuragi

    发明人: Shiro Sakuragi

    摘要: A shaper (2) is arranged within a shaping vessel (1). A raw material for a crystal is inserted into the shaping vessel (1) and a crystal melt (5) is formed by setting it in a predetermined atmosphere and heating it. A mechanical force F1 is applied to the crystal melt (5), which is present on the upper surface of the shaper (2), by a pressuring member (4) from above. The crystal melt (5) has nowhere to escape but a gap (3) formed by the shaper(2), so it is injected into that gap (3) as shown by the arrow. This method of fabricating a shaped crystal is suitable for fabricating a monocrystal or multicrystal semiconductor from a material such as silicon, germanium, or bismuth telluride.

    摘要翻译: PCT No.PCT / FR95 / 01278 Sec。 371日期1997年5月21日 102(e)日期1997年5月21日PCT提交1996年7月30日PCT公布。 公开号WO97 / 13010 PCT 日期1997年4月10日成形器(2)布置在成形容器(1)内。 将晶体原料插入成形容器(1)中,并通过将其固定在预定的气氛中并加热来形成晶体熔体(5)。 机械力F1通过加压构件(4)从上方施加到存在于成形器(2)的上表面上的结晶熔体(5)。 晶体熔体(5)无法逃脱,而是由整形器(2)形成的间隙(3),因此如箭头所示注入到该间隙(3)中。 这种制造成形晶体的方法适用于从诸如硅,锗或碲化铋的材料制造单晶或多晶半导体。

    METHOD OF COATING QUARTZ CRUCIBLE FOR GROWING SILICON CRYSTAL, AND QUARTZ CRUCIBLE FOR GROWING SILICON CRYSTAL
    6.
    发明申请
    METHOD OF COATING QUARTZ CRUCIBLE FOR GROWING SILICON CRYSTAL, AND QUARTZ CRUCIBLE FOR GROWING SILICON CRYSTAL 有权
    用于生成硅晶体的石墨坩埚的方法和用于生长硅晶体的石墨坩埚

    公开(公告)号:US20140150714A1

    公开(公告)日:2014-06-05

    申请号:US14114002

    申请日:2011-12-02

    IPC分类号: C30B15/10

    摘要: A coating method for coating a crucible and a quartz crucible for growing a silicon crystal are provided. In the coating method, a bubble-free quartz layer which is 80 μm to 4 mm thick is formed on an inner surface of a crucible for growing a silicon crystal, and the surface of the bubble-free quartz layer is covered with alkaline earth hydroxide, following which heating is performed to a temperature at which the surface becomes devitrified. The surface may be covered by immersing the inner surface in a solution of the alkaline earth hydroxide. The heating may be performed before the crucible for growing silicon crystal is filled with a solid raw material to be melted.

    摘要翻译: 提供了一种用于涂覆坩埚和用于生长硅晶体的石英坩埚的涂覆方法。 在涂布方法中,在用于生长硅晶体的坩埚的内表面上形成厚度为80μm至4mm的无气泡的石英层,并且无气泡的石英层的表面被碱土金属氢氧化物 ,随后进行加热到表面失透的温度。 可以通过将内表面浸入碱土金属氢氧化物的溶液中来覆盖表面。 可以在用于生长硅晶体的坩埚填充待熔化的固体原料之前进行加热。

    Method and apparatus for growing a single crystal in various shapes
    7.
    发明授权
    Method and apparatus for growing a single crystal in various shapes 失效
    用于生长各种形状的单晶的方法和装置

    公开(公告)号:US06428617B1

    公开(公告)日:2002-08-06

    申请号:US09665304

    申请日:2000-09-19

    IPC分类号: C30B1316

    摘要: The apparatus is provided with a vessel 1 for accommodating a melt 3 of material sought to be crystallized, and heaters 2 disposed symmetrically on both sides of the vessel. The vessel 1 has an interior space whose front cross section is symmetrical in shape along a vertical center line. The heaters 2 heat the vessel to create a temperature distribution in the melt in which the upper part of the vessel 1 is at a higher temperature, and the lower part thereof is at a lower temperature. The temperature distribution causes symmetrical convection flows of the melt in such a manner that two flows each move up along the side walls of the interior space of the vessel 1 and meet with each other at the top of the interior space where the vertical center line runs, and move together down along the vertical center line toward the bottom of the interior space. A single crystal is formed as the temperature at the lower end of the vessel 1 is gradually lowered below the melting point of the material.

    摘要翻译: 该设备设置有用于容纳寻求结晶的材料的熔体3的容器1和对称地设置在容器两侧的加热器2。 容器1具有内部空间,其前横截面沿垂直中心线对称地形状。 加热器2加热容器以在熔体中产生温度分布,其中容器1的上部处于较高温度,并且其下部处于较低温度。 温度分布导致熔体的对称对流,使得两个流动沿着容器1的内部空间的侧壁向上移动并且在垂直中心线延伸的内部空间的顶部彼此相遇 ,沿着垂直中心线向内移动到内部空间的底部。 当容器1的下端的温度逐渐降低到材料的熔点以下时,形成单晶。

    Focal point direct observation type laser scalpel device
    8.
    发明授权
    Focal point direct observation type laser scalpel device 失效
    焦点直接观察型激光手术刀装置

    公开(公告)号:US4458683A

    公开(公告)日:1984-07-10

    申请号:US355311

    申请日:1982-03-05

    CPC分类号: A61B18/22 A61B2018/2233

    摘要: A focal point direct observation type laser scalpel device has a construction wherein laser beams generated by an infrared laser generator and transmitted through an optical fiber adapted for infrared laser beams and visible rays issued from a visible ray source and transmitted through optical fibers adapted for visible rays are passed through one common converging lens system so that recognition of the focal point of the laser beams is accomplished by visual observation of the focal point of the visible rays.

    摘要翻译: 焦点直接观察型激光手术刀装置具有这样的结构,其中由红外激光发生器产生并通过适于红外激光束的光纤和由可见光源产生并通过适于可见光线的光纤传输的可见光的透射的激光束 通过一个共同的会聚透镜系统,从而通过目视观察可见光的焦点来实现对激光束焦点的识别。

    Flexible cable
    9.
    发明授权
    Flexible cable 失效
    柔性电缆

    公开(公告)号:US4396797A

    公开(公告)日:1983-08-02

    申请号:US333184

    申请日:1981-12-21

    摘要: A flexible cable suitably used as a jacket or cover for an inner conduit member such as a gas conduit or a liquid conduit, a signal transmission line, or an energy transmission line, or the like, which can provide safe use of the conduit inserted thereinto by limiting the bending radius thereof. The cable includes a plurality of axially symmetrical pipe members having large and small diameter ends which are assembled with the small ends of each pipe member fitted into the large end of an adjacent pipe member and loosely fitting flexible ring members fitted over the small ends of the pipe members.

    摘要翻译: 一种适合用作内部导管构件(例如气体导管或液体导管,信号传输线或能量传输线等)的护套或盖的柔性电缆,可以安全地使用插入其中的导管 通过限制其弯曲半径。 电缆包括多个具有大直径和小直径的轴向对称的管构件,它们组装有每个管构件的小端装配在相邻管件的大端部中,并且松配合的柔性环件安装在 管道成员。

    Coated silica crucible having a bubble-free layer, and method of producing the same
    10.
    发明授权
    Coated silica crucible having a bubble-free layer, and method of producing the same 有权
    具有无气泡层的涂覆石英坩埚及其制造方法

    公开(公告)号:US09593432B2

    公开(公告)日:2017-03-14

    申请号:US14114002

    申请日:2011-12-02

    IPC分类号: C30B15/10 C30B29/06 C03C17/34

    摘要: A coating method for coating a crucible and a quartz crucible for growing a silicon crystal are provided. In the coating method, a bubble-free quartz layer which is 80 μm to 4 mm thick is formed on an inner surface of a crucible for growing a silicon crystal, and the surface of the bubble-free quartz layer is covered with alkaline earth hydroxide, following which heating is performed to a temperature at which the surface becomes devitrified. The surface may be covered by immersing the inner surface in a solution of the alkaline earth hydroxide. The heating may be performed before the crucible for growing silicon crystal is filled with a solid raw material to be melted.

    摘要翻译: 提供了一种用于涂覆坩埚和用于生长硅晶体的石英坩埚的涂覆方法。 在涂布方法中,在用于生长硅晶体的坩埚的内表面上形成厚度为80μm至4mm的无气泡的石英层,并且无气泡的石英层的表面被碱土金属氢氧化物 ,随后进行加热到表面失透的温度。 可以通过将内表面浸入碱土金属氢氧化物的溶液中来覆盖表面。 可以在用于生长硅晶体的坩埚填充待熔化的固体原料之前进行加热。