发明授权
- 专利标题： Gas injection slit nozzle for a plasma process reactor
- 专利标题（中）： 用于等离子体处理反应器的气体注入狭缝喷嘴
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申请号： US682803申请日： 1996-07-09
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公开(公告)号： US5885358A公开(公告)日： 1999-03-23
- 发明人: Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , James S. Papanu , Avi Tepman
- 申请人： Dan Maydan , Steve S. Y. Mak , Donald Olgado , Gerald Zheyao Yin , Timothy D. Driscoll , James S. Papanu , Avi Tepman
- 申请人地址： CA Santa Clara
- 专利权人： Applied Materials, Inc.
- 当前专利权人： Applied Materials, Inc.
- 当前专利权人地址： CA Santa Clara
- 主分类号： C23C16/44
- IPC分类号： C23C16/44 ; C23C16/455 ; C23C16/50 ; H01J37/32 ; H01L21/02 ; H01L21/205 ; H01L21/302 ; H01L21/3065 ; C23C16/00
摘要：
A gas injection system for injecting gases into a plasma reactor having a vacuum chamber with a sidewall, a pedestal for holding a semiconductor wafer to be processed, and a RF power applicator for applying RF power into the chamber. The gas injection system includes at least one gas supply containing gas, a gas distribution apparatus which has at least one slotted aperture facing the interior of the chamber, and one or more gas feed lines connecting the gas supply or supplies to the gas distribution apparatus. A preferred embodiment of a radial gas distribution apparatus in accordance with the present invention is disposed in the chamber sidewall and includes plural gas distribution nozzles each with a slotted aperture facing an interior of the chamber. Gas feed lines are employed to respectively connect each gas distribution nozzle to separate ones of the gas supplies.
公开/授权文献
- US4093982A Microprocessor system 公开/授权日：1978-06-06
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