发明授权
US5888883A Method of dividing a wafer and method of manufacturing a semiconductor
device
失效
分割晶片的方法和制造半导体器件的方法
- 专利标题: Method of dividing a wafer and method of manufacturing a semiconductor device
- 专利标题(中): 分割晶片的方法和制造半导体器件的方法
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申请号: US65626申请日: 1998-04-24
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公开(公告)号: US5888883A公开(公告)日: 1999-03-30
- 发明人: Shigeo Sasaki , Shinya Takyu , Keisuke Tokubuchi , Koichi Yazima
- 申请人: Shigeo Sasaki , Shinya Takyu , Keisuke Tokubuchi , Koichi Yazima
- 申请人地址: JPX Kawasaki
- 专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人: Kabushiki Kaisha Toshiba
- 当前专利权人地址: JPX Kawasaki
- 优先权: JPX9-197291 19970723
- 主分类号: H01L21/301
- IPC分类号: H01L21/301 ; H01L21/304 ; H01L21/68 ; H01L21/78
摘要:
Grooves are formed in a surface of a wafer, on which surface semiconductor elements are formed, along dicing lines. The grooves are deeper than a thickness of a finished chip. A holding member is attached on the surface of the wafer on which the semiconductor elements are formed. A bottom surface of the wafer is lapped and polished to the thickness of the finished chip, thereby dividing the wafer into chips. When the wafer is divided into the chips, the lapping and polishing is continued until the thickness of the wafer becomes equal to the thickness of the finished chip, even after the wafer has been divided into the chips by the lapping and polishing.
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