公开(公告)号：US5888883A

公开(公告)日：1999-03-30

申请号：US65626

申请日：1998-04-24

申请人： Shigeo Sasaki ,  Shinya Takyu ,  Keisuke Tokubuchi ,  Koichi Yazima

发明人： Shigeo Sasaki ,  Shinya Takyu ,  Keisuke Tokubuchi ,  Koichi Yazima

IPC分类号： H01L21/301 ,  H01L21/304 ,  H01L21/68 ,  H01L21/78

CPC分类号： H01L21/6835 ,  H01L21/3043 ,  H01L21/6836 ,  H01L21/78 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L24/73 ,  H01L2924/01079 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/181 ,  H01L2924/19041

摘要： Grooves are formed in a surface of a wafer, on which surface semiconductor elements are formed, along dicing lines. The grooves are deeper than a thickness of a finished chip. A holding member is attached on the surface of the wafer on which the semiconductor elements are formed. A bottom surface of the wafer is lapped and polished to the thickness of the finished chip, thereby dividing the wafer into chips. When the wafer is divided into the chips, the lapping and polishing is continued until the thickness of the wafer becomes equal to the thickness of the finished chip, even after the wafer has been divided into the chips by the lapping and polishing.

摘要翻译： 沟槽沿着切割线形成在其上形成有表面半导体元件的晶片的表面中。 凹槽比成品芯片的厚度更深。 保持构件安装在其上形成有半导体元件的晶片的表面上。 将晶片的底表面研磨并抛光至成品芯片的厚度，从而将晶片分成芯片。 当晶片被分成芯片时，即使在通过研磨和抛光将晶片分割成芯片之后，研磨和抛光仍然持续到晶片的厚度等于成品芯片的厚度。

公开(公告)号：US06184109B2

公开(公告)日：2001-02-06

申请号：US09234505

申请日：1999-01-21

申请人： Shigeo Sasaki ,  Shinya Takyu ,  Keisuke Tokubuchi ,  Koichi Yazima ,  Hideo Nakayoshi

发明人： Shigeo Sasaki ,  Shinya Takyu ,  Keisuke Tokubuchi ,  Koichi Yazima ,  Hideo Nakayoshi

IPC分类号： H01L21301

CPC分类号： H01L21/6835 ,  H01L21/3043 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/73 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83 ,  H01L2224/92247 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/181 ,  H01L2924/19041 ,  Y10S438/928 ,  Y10S438/977 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2924/01031 ,  H01L2924/00 ,  H01L2924/3512

摘要： Grooves are formed in a surface of a wafer, on which surface semiconductor elements are formed, along dicing lines on the wafer by means of a dicing blade. The grooves are deeper than a thickness of a finished chip. Alternatively, grooves are formed in a surface of a wafer, on which surface semiconductor elements are formed, along chip parting lines on the wafer by etching. Like the grooves described above, the grooves are deeper than a thickness of a finished chip. A holding member is attached on the surface of the wafer on which the semiconductor elements are formed. The bottom surface of the wafer is lapped and polished to the thickness of the finished chip, thereby dividing the wafer into chips. When the wafer is divided into the chips, the lapping and polishing is continued until the thickness of the wafer becomes equal to the thickness of the finished chip, even after the wafer has been divided into the chips by the lapping and polishing.

摘要翻译： 通过切割刀片，在晶片的切割线上，在其上形成表面半导体元件的晶片的表面上形成沟槽。 凹槽比成品芯片的厚度更深。 或者，通过蚀刻在晶片上沿芯片分割线在其上形成有表面半导体元件的晶片的表面中形成凹槽。 与上述凹槽一样，凹槽比成品芯片的厚度更深。 保持构件安装在其上形成有半导体元件的晶片的表面上。 将晶片的底表面研磨并抛光至成品芯片的厚度，从而将晶片分成芯片。 当晶片被分成芯片时，即使在通过研磨和抛光将晶片分割成芯片之后，研磨和抛光仍然持续到晶片的厚度等于成品芯片的厚度。

公开(公告)号：US06294439B1

公开(公告)日：2001-09-25

申请号：US09499466

申请日：2000-02-07

申请人： Shigeo Sasaki ,  Shinya Takyu ,  Keisuke Tokubuchi ,  Koichi Yazima ,  Hideo Nakayoshi

发明人： Shigeo Sasaki ,  Shinya Takyu ,  Keisuke Tokubuchi ,  Koichi Yazima ,  Hideo Nakayoshi

IPC分类号： H01L2146

CPC分类号： H01L21/6835 ,  B23K26/364 ,  B23K26/40 ,  B23K2103/172 ,  B23K2103/50 ,  H01L21/3043 ,  H01L21/6836 ,  H01L21/78 ,  H01L24/83 ,  H01L2221/68327 ,  H01L2221/6834 ,  H01L2224/32245 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/48465 ,  H01L2224/73215 ,  H01L2224/73265 ,  H01L2224/83 ,  H01L2224/92247 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01033 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/10329 ,  H01L2924/181 ,  H01L2924/19041 ,  Y10S438/928 ,  Y10S438/977 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/01031 ,  H01L2924/3512 ,  H01L2924/00012

摘要： Grooves are formed in a surface of a wafer, on which semiconductor elements are formed, along dicing lines or chip parting lines on the wafer. The grooves are deeper than the thickness of a finished chip, and each of them has a curved bottom surface. A holding sheet is attached on the surface of the wafer on which the semiconductor elements are formed. Subsequently, the rear surface of the wafer is lapped and polished to the thickness of the finished chip, thereby dividing the wafer into chips. Even after the wafer is divided into the chips, the lapping and polishing is continued until the thickness of the wafer becomes equal to the thickness of the finished chip. The lapping and polishing amount required to attain the thickness of the finished chip after the lapped face of the wafer reaches the bottom surface of the groove, and a depth of a region of the curved bottom surface of the groove define a ratio of not less than 0.3.

摘要翻译： 在晶片的切割线或芯片分型线上形成有半导体元件的晶片的表面上形成槽。 凹槽比成品芯片的厚度更深，并且每个凹槽具有弯曲的底面。 保持片附着在其上形成有半导体元件的晶片的表面上。 随后，将晶片的后表面研磨成最终芯片的厚度，从而将晶片分成芯片。 即使在将晶片分成芯片之后，研磨和研磨仍在继续，直到晶圆厚度等于成品芯片的厚度。 在晶片的研磨面到达凹槽的底面之后获得成品芯片的厚度所需的研磨和研磨量，凹槽的弯曲底面的区域的深度定义为不小于 0.3。

公开(公告)号：US5952316A

公开(公告)日：1999-09-14

申请号：US911602

申请日：1997-08-14

申请人： Tetsuro Fujita ,  Shigeo Sasaki ,  Masahiko Yoneta ,  Tadashi Mishina ,  Kunitomo Adachi ,  Kenji Chiba

发明人： Tetsuro Fujita ,  Shigeo Sasaki ,  Masahiko Yoneta ,  Tadashi Mishina ,  Kunitomo Adachi ,  Kenji Chiba

IPC分类号： A01N33/02 ,  A01N43/40 ,  A01N43/60 ,  A01N57/00 ,  C07C215/10 ,  C07C215/18 ,  C07C215/20 ,  C07C215/24 ,  C07C215/26 ,  C07C215/28 ,  C07C215/34 ,  C07C215/42 ,  C07C215/54 ,  C07C215/56 ,  C07C215/68 ,  C07C217/28 ,  C07C217/30 ,  C07C217/34 ,  C07C217/48 ,  C07C217/52 ,  C07C217/64 ,  C07C217/72 ,  C07C217/76 ,  C07C219/06 ,  C07C219/24 ,  C07C219/30 ,  C07C225/04 ,  C07C225/06 ,  C07C225/10 ,  C07C225/14 ,  C07C225/16 ,  C07C229/22 ,  C07C229/38 ,  C07C229/46 ,  C07C233/18 ,  C07C233/31 ,  C07C233/35 ,  C07C233/36 ,  C07C233/41 ,  C07C233/43 ,  C07C233/47 ,  C07C237/06 ,  C07C237/24 ,  C07C237/30 ,  C07C251/38 ,  C07C271/20 ,  C07C271/24 ,  C07C271/28 ,  C07C323/25 ,  C07C323/30 ,  C07C323/32 ,  C07C323/34 ,  C07C323/41 ,  C07D207/06 ,  C07D207/09 ,  C07D207/32 ,  C07D207/325 ,  C07D207/335 ,  C07D211/14 ,  C07D211/26 ,  C07D213/38 ,  C07D213/40 ,  C07D233/54 ,  C07D237/08 ,  C07D239/26 ,  C07D241/12 ,  C07D261/08 ,  C07D263/32 ,  C07D265/30 ,  C07D275/02 ,  C07D277/28 ,  C07D279/12 ,  C07D295/13 ,  C07D295/135 ,  C07D307/52 ,  C07D309/32 ,  C07D317/28 ,  C07D333/20 ,  C07D521/00 ,  C07P211/00 ,  C07P401/00

CPC分类号： C07D207/325 ,  C07C215/10 ,  C07C215/18 ,  C07C215/20 ,  C07C215/24 ,  C07C215/26 ,  C07C215/28 ,  C07C215/34 ,  C07C215/42 ,  C07C215/54 ,  C07C215/56 ,  C07C215/68 ,  C07C217/28 ,  C07C217/30 ,  C07C217/34 ,  C07C217/48 ,  C07C217/52 ,  C07C217/64 ,  C07C217/72 ,  C07C217/76 ,  C07C219/06 ,  C07C219/24 ,  C07C219/30 ,  C07C225/04 ,  C07C225/06 ,  C07C225/10 ,  C07C225/14 ,  C07C225/16 ,  C07C229/22 ,  C07C229/38 ,  C07C229/46 ,  C07C233/18 ,  C07C233/31 ,  C07C233/35 ,  C07C233/36 ,  C07C233/41 ,  C07C233/43 ,  C07C233/47 ,  C07C237/06 ,  C07C237/24 ,  C07C237/30 ,  C07C251/38 ,  C07C271/20 ,  C07C271/24 ,  C07C271/28 ,  C07C323/25 ,  C07C323/30 ,  C07C323/32 ,  C07C323/34 ,  C07C323/41 ,  C07D207/06 ,  C07D207/09 ,  C07D207/335 ,  C07D211/14 ,  C07D211/26 ,  C07D213/38 ,  C07D213/40 ,  C07D231/12 ,  C07D233/56 ,  C07D233/64 ,  C07D237/08 ,  C07D239/26 ,  C07D241/12 ,  C07D249/08 ,  C07D261/08 ,  C07D263/32 ,  C07D265/30 ,  C07D275/02 ,  C07D277/28 ,  C07D279/12 ,  C07D295/13 ,  C07D295/135 ,  C07D307/52 ,  C07D309/32 ,  C07D317/28 ,  C07D333/20 ,  C07C2101/08 ,  C07C2101/14

摘要： 2-Amino-1,3-propanediol compounds of the formula (I) ##STR1## wherein R is an optionally substituted straight- or branched carbon chain, an optionally substituted aryl, an optionally substituted cycloalkyl or the like, and R.sup.2, R.sup.3, R.sup.4 and R.sup.5 are the same or different and each is a hydrogen, an alkyl, an aralkyl, an acyl or an alkoxycarbonyl, pharmaceutically acceptable salts thereof and immunosuppressants comprising these compounds as active ingredients.The 2-amino-1,3-propanediol compounds of the present invention show immunosuppressive action and are useful for suppressing rejection in organ or bone marrow tranplantation, prevention and treatment of autoimmune diseases or as reagents for use in medicinal and pharmaceutical fields.

摘要翻译： 式（I）的2-氨基-1,3-丙二醇化合物，其中R是任选取代的直链或支链碳链，任选取代的芳基，任选取代的环烷基等，以及R 2，R 3，R 4和R 5 各自为氢，烷基，芳烷基，酰基或烷氧基羰基，其药学上可接受的盐和包含这些化合物作为活性成分的免疫抑制剂。 本发明的2-氨基-1,3-丙二醇化合物显示免疫抑制作用，可用于抑制器官或骨髓移植中的排斥反应，预防和治疗自身免疫性疾病或用作药物和药物领域的试剂。

公开(公告)号：US5403989A

公开(公告)日：1995-04-04

申请号：US36399

申请日：1993-03-24

申请人： Hiroaki Tobuse ,  Tomoyuki Kanda ,  Yasusi Hisaoka ,  Shigeo Sasaki ,  Minoru Kobayashi ,  Takuji Oda ,  Ryuji Ueda ,  Akio Yoshida ,  Tadayoshi Owaki ,  Akihiko Yamasaki ,  Masaaki Kinoshita ,  Toshiaki Fukunishi

发明人： Hiroaki Tobuse ,  Tomoyuki Kanda ,  Yasusi Hisaoka ,  Shigeo Sasaki ,  Minoru Kobayashi ,  Takuji Oda ,  Ryuji Ueda ,  Akio Yoshida ,  Tadayoshi Owaki ,  Akihiko Yamasaki ,  Masaaki Kinoshita ,  Toshiaki Fukunishi

IPC分类号： H01J9/50 ,  H04N3/30 ,  B23K15/00

CPC分类号： H04N3/30 ,  H01J9/50 ,  H01J2209/3893 ,  Y02W30/828

摘要： In a color cathode-ray tube, only a foreign matter adhering to a shadow mask is removed effectively without thermal deformation of the shadow mask or thermal denaturation of phosphors.An electron beam produced by an electron gun incorporated in a cathode-ray tube itself is scanned or irradiated to all over a shadow mask of the color cathode-ray tube. The radiant state of a fluorescent screen at this stage is checked to detect a foreign matter adhering to the shadow mask. The electron beam is deflected to align with the position at which the foreign matter is detected, and then irradiated to the foreign matter in the form of pulses. Thus, the foreign matter is heated and removed.

摘要翻译： 在彩色阴极射线管中，只有在荫罩的热变形或荧光体的热变性的情况下才能有效地去除附着在荫罩上的异物。 通过并入阴极射线管本身的电子枪产生的电子束被扫描或照射到彩色阴极射线管的阴影掩模上。 检查在该阶段的荧光屏的辐射状态以检测附着在荫罩上的异物。 电子束被偏转以与检测异物的位置对准，然后以脉冲的形式照射到异物。 因此，异物被加热和去除。

公开(公告)号：US5025167A

公开(公告)日：1991-06-18

申请号：US533769

申请日：1990-06-06

申请人： Soichiro Okuda ,  Tetsuya Nakanishi ,  Shigeo Sasaki ,  Kazuhiko Noguchi

发明人： Soichiro Okuda ,  Tetsuya Nakanishi ,  Shigeo Sasaki ,  Kazuhiko Noguchi

IPC分类号： H01J37/09 ,  H01J37/304 ,  H01J37/317

CPC分类号： H01J37/09 ,  H01J37/304 ,  H01J37/3171

摘要： An ion implantation apparatus comprises an ion beam measuring device to measure and analyze the shape of a beam projected on a substrate for ion implantation and the quantity of current obtained by the ion beam, an analyzing slit member having an opening whose width is changeable, which is located in the ion beam track to extract only implantation ions, and a shaping slit member having an opening whose width is changeable, which is located behind the analyzing slit member to determine the shape of the beam to be projected on the substrate for ion implantation, wherein the widths of the openings of the analyzing slit member and the shaping slit member are changed on the basis of the shape of the beam and the quantity of current obtained as a result of the measurement by the ion beam measuring device.

摘要翻译： 离子注入装置包括离子束测量装置，用于测量和分析投影在用于离子注入的基板上的光束的形状和由离子束获得的电流量，分析狭缝部件，其具有宽度可变的开口， 位于离子束轨道中以仅提取注入离子;以及成形狭缝构件，其具有位于分析狭缝构件后面的宽度可变的开口，以确定要投影到用于离子注入的衬底上的光束的形状 其中分析狭缝部件和成形狭缝部件的开口的宽度基于由离子束测量装置测量的结果获得的光束形状和电流量而改变。

公开(公告)号：US06555418B2

公开(公告)日：2003-04-29

申请号：US09735617

申请日：2000-12-14

申请人： Tetsuya Kurosawa ,  Shigeo Sasaki

发明人： Tetsuya Kurosawa ,  Shigeo Sasaki

IPC分类号： H01L2148

CPC分类号： H01L21/67144 ,  H01L2221/68322 ,  H01L2924/0002 ,  Y10S156/943 ,  Y10T156/1983 ,  H01L2924/00

摘要： A push-up pin used for separating a semiconductor element attached by adhesive to an adhesive sheet of a semiconductor element pushing-up device in a die bonding apparatus from the adhesive sheet by pushing up the semiconductor element from the rear surface side of the adhesive sheet includes a tip end portion having a shape for applying pushing-up pressure with the thicknesses of the adhesive sheet and the adhesive kept constant when the pushing-up pressure for pushing up the semiconductor element from the rear surface side of the adhesive sheet is applied, and a base portion for supporting the tip end portion.

摘要翻译： 一种用于将由粘合剂附着的半导体元件与芯片接合装置中的半导体元件上推装置的粘合片从粘合片分离的上推销，其中该半导体元件从粘合片的后表面侧向上推 包括当施加用于从粘合片的后表面侧推上半导体元件的上推压力时，具有用于施加上推压力的形状的末端部分，其中粘合片和粘合剂的厚度保持恒定， 以及用于支撑前端部的基部。

公开(公告)号：US06201306B1

公开(公告)日：2001-03-13

申请号：US08760117

申请日：1996-12-03

申请人： Tetsuya Kurosawa ,  Shigeo Sasaki

发明人： Tetsuya Kurosawa ,  Shigeo Sasaki

IPC分类号： H01L2348

CPC分类号： H01L21/67144 ,  H01L2221/68322 ,  H01L2924/0002 ,  Y10S156/943 ,  Y10T156/1983 ,  H01L2924/00

摘要： A push-up pin used for separating a semiconductor element attached by adhesive to an adhesive sheet of a semiconductor element pushing-up device in a die bonding apparatus from the adhesive sheet by pushing up the semiconductor element from the rear surface side of the adhesive sheet includes a tip end portion having a shape for applying pushing-up pressure with the thicknesses of the adhesive sheet and the adhesive kept constant when the pushing-up pressure for pushing up the semiconductor element from the rear surface side of the adhesive sheet is applied, and a base portion for supporting the tip end portion.

摘要翻译： 一种用于将由粘合剂附着的半导体元件与芯片接合装置中的半导体元件上推装置的粘合片从粘合片分离的上推销，其中该半导体元件从粘合片的后表面侧向上推 包括当施加用于从粘合片的后表面侧推上半导体元件的上推压力时，具有用于施加上推压力的形状的末端部分，其中粘合片和粘合剂的厚度保持恒定， 以及用于支撑前端部的基部。

公开(公告)号：US5132545A

公开(公告)日：1992-07-21

申请号：US568191

申请日：1990-08-16

申请人： Kazuhiro Shono ,  Shigeo Sasaki ,  Susumu Katoh ,  Masao Naitou ,  Tetsuya Nakanishi ,  Naomitsu Fujishita ,  Kazuhiko Noguchi ,  Masayasu Tanjo

发明人： Kazuhiro Shono ,  Shigeo Sasaki ,  Susumu Katoh ,  Masao Naitou ,  Tetsuya Nakanishi ,  Naomitsu Fujishita ,  Kazuhiko Noguchi ,  Masayasu Tanjo

IPC分类号： H01J37/302 ,  H01J37/317

CPC分类号： H01J37/302 ,  H01J37/3171 ,  H01J2237/24542

摘要： An ion implantation apparatus includes an ion source having an arc chamber generating ions and a drawing electrode drawing ions from the arc chamber, a mass separator transporting only ions desired for implantation, an ion implantation chamber in which the material to be implanted by ions is placed, and a controller means for automatically controlling the distance between the arc chamber and the drawing electrode incrementally in accordance with a theoretical calculation using normalized perveance considering the kind of ions to be implanted, the accelerating voltage, and the ion current and current density distribution.

公开(公告)号：US4802045A

公开(公告)日：1989-01-31

申请号：US840866

申请日：1986-03-18

申请人： Osamu Yamamoto ,  Shigeo Sasaki ,  Shinichi Kagano

发明人： Osamu Yamamoto ,  Shigeo Sasaki ,  Shinichi Kagano

IPC分类号： G11B23/087 ,  G11B23/02

CPC分类号： G11B23/08785

摘要： In a tape cartridge of the Philips type, one or more ribs are projected from a main plate of each case half at regions except for the tape chamber and the tape path so as to conform to one or more flow lines of resin when each half of molded, the cartridge is so that the formation of traces of resin can be prevented, resulting in an increase in mechanical strength of the cartridge.

摘要翻译： 在飞利浦类型的带盒中，一个或多个肋从每个壳体半部的主板在除了带室和带路径之外的区域处突出，以便当每一半的树脂的一半 可以防止墨盒的形成，从而可以提高墨盒的机械强度。