发明授权
- 专利标题： Semiconductor device with high breakdown voltage island region
- 专利标题（中）： 半导体器件具有高击穿电压岛区
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申请号： US854088申请日： 1997-05-09
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公开(公告)号： US5889310A公开(公告)日： 1999-03-30
- 发明人: Tomohide Terashima , Kazuhiro Shimizu
- 申请人： Tomohide Terashima , Kazuhiro Shimizu
- 申请人地址： JPX Tokyo
- 专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人： Mitsubishi Denki Kabushiki Kaisha
- 当前专利权人地址： JPX Tokyo
- 优先权： JPX9-103346 19970421
- 主分类号： H01L27/06
- IPC分类号： H01L27/06 ; H01L29/10 ; H01L29/78 ; H01L29/76 ; H01L29/94 ; H01L31/062
摘要：
A high breakdown voltage pch-MOSFET having a breakdown voltage of 150V or more and a control element controlling the same are formed in a common n.sup.- epitaxial layer. Only an n-type region of n.sup.- epitaxial layer is distributed at a region located between the high breakdown voltage pch-MOSFET and the control element and extending along the substrate surface. A semiconductor device thus formed achieves a good throughput and reduces a required chip area.