发明授权
- 专利标题: Metal oxide film resistor
- 专利标题(中): 金属氧化膜电阻
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申请号: US750205申请日: 1996-11-27
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公开(公告)号: US5889459A公开(公告)日: 1999-03-30
- 发明人: Akiyoshi Hattori , Yoshihiro Hori , Masaki Ikeda , Akihiko Yoshida , Yasuhiro Shindo , Kouzou Igarashi
- 申请人: Akiyoshi Hattori , Yoshihiro Hori , Masaki Ikeda , Akihiko Yoshida , Yasuhiro Shindo , Kouzou Igarashi
- 申请人地址: JPX
- 专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人: Matsushita Electric Industrial Co., Ltd.
- 当前专利权人地址: JPX
- 优先权: JPX7-070132 19950328; JPX7-071516 19950329
- 主分类号: H01C7/06
- IPC分类号: H01C7/06 ; H01C17/065
摘要:
According to the present invention, there is provided a metal oxide film resistor which has an insulating substrate, a metal oxide resistive film having at least a metal oxide film having a positive temperature coefficient of resistance and/or a metal oxide film having a negative temperature coefficient of resistance, and/or a metal oxide insulating film. The metal oxide film resistor is not affected by moisture or alkali ions in the insulating substrate. The resistance of the film itself does not change. The metal oxide film resistor is extremely reliable.
公开/授权文献
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